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NXP FQP12N60C 48HRS

High Voltage N-Channel Transistor

ISO14001 ISO9001 DUNS

Brands: Onsemi

Mfr.Part #: FQP12N60C

Datasheet: FQP12N60C Datasheet (PDF)

Package/Case: TO-220-3

RoHS Status:

Stock Condition: 2373 pcs, New Original

Product Type: Transistors

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $4.926 $4.926
10 $4.327 $43.270
30 $3.773 $113.190
100 $3.466 $346.600

In Stock:2373 PCS

- +

Quick Quote

Please submit RFQ for FQP12N60C or email to us: Email: [email protected], we will contact you within 12 hours.

FQP12N60C General Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

fqp12n60c

Features

  • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, ID = 6 A
  • Low Gate Charge (Typ. 48 nC)
  • Low Crss (Typ. 21 pF)
  • 100% Avalanche Tested

Application

  • Switching power supplies
  • Motor control circuits
  • Lighting ballasts
  • Audio amplifiers
  • DC-DC converters
  • Solar inverters

Specifications

Parameter Value Parameter Value
Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Current 12 A
Rds On - Drain-Source Resistance 650 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 48 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 225 W Channel Mode Enhancement
Series FQP12N60C Brand onsemi / Fairchild
Configuration Single Fall Time 90 ns
Forward Transconductance - Min 13 S Height 16.3 mm
Length 10.67 mm Product Type MOSFET
Rise Time 85 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 155 ns
Typical Turn-On Delay Time 30 ns Width 4.7 mm
Unit Weight 0.068784 oz

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Equivalent Parts

For the FQP12N60C component, you may consider these replacement and alternative parts:

Part Number

Brands

Package

Description

Part Number :   STP12NM50FP

Brands :  

Package :   TO-220

Description :   Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab)

Part Number :   IRFP260N

Brands :  

Package :  

Description :  

Part Number :   IRFP450

Brands :  

Package :  

Description :  

Part Number :   FQPF12N60C

Brands :  

Package :  

Description :  

Part Number :   STW13NB60

Brands :  

Package :   TO-247

Description :   N-Channel Enhancement Mode PowerMESHTM MOSFETNMOSFET

Part Number :   IPD12N06S2L-26

Brands :  

Package :  

Description :  

Part Number :   2SK2645

Brands :  

Package :  

Description :  

Part points

  • The FQP12N60C is a power MOSFET chip that can handle high current and voltage levels. It is commonly used in various electronic devices and circuits to switch and control power. The chip's features include a low on-resistance, fast switching speed, and high reliability. It is widely available in the market and suitable for applications that require efficient power management and control.
  • Features

    The FQP12N60C is a power MOSFET transistor with a voltage rating of 600V and a current rating of 12A. It has a low on-resistance, suitable for high power applications. It also features a fast-switching capability and is designed to withstand high voltage stress.
  • Pinout

    The FQP12N60C is a power MOSFET with a TO-220 package. It has 3 pins: Gate, Drain, and Source. The Gate pin is used to control the switching characteristics of the MOSFET, while the Drain and Source pins are used for power flow.
  • Manufacturer

    The manufacturer of the FQP12N60C is Fairchild Semiconductor. It is an American company that specializes in the development and manufacturing of power semiconductors and integrated circuits.
  • Application Field

    The FQP12N60C is a power MOSFET transistor commonly used in various applications such as power supplies, motor control systems, and switching circuits. Its low on-resistance, high current carrying capacity, and fast switching speeds make it suitable for efficient power management and control in electronic devices.
  • Package

    The FQP12N60C chip is available in a TO-220 package type, with 3 pins, and its form factor is through-hole. The package size measures approximately 10.16mm x 4.57mm x 9.53mm.

Datasheet PDF

Preliminary Specification FQP12N60C PDF Download

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