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ST NAND01GW3B2CN6E 48HRS

FLASH - NAND Memory IC 1Gbit Parallel 25 ns 48-TSOP

ISO14001 ISO9001 DUNS

Brands: STMicroelectronics, Inc

Mfr.Part #: NAND01GW3B2CN6E

Datasheet: NAND01GW3B2CN6E Datasheet (PDF)

Package/Case: TSOP48

RoHS Status:

Stock Condition: 2,835 pcs, New Original

Product Type: Memory

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $11.912 $11.912
200 $4.753 $950.600
576 $4.595 $2646.720
1152 $4.515 $5201.280

In Stock: 2,835 PCS

- +

Quick Quote

Please submit RFQ for NAND01GW3B2CN6E or email to us: Email: [email protected], we will contact you within 12 hours.

NAND01GW3B2CN6E General Description

FLASH - NAND Memory IC 1Gbit Parallel 25 ns 48-TSOP

nand01gw3b2cn6e

Features

  • Memory size: 1 gigabit
  • Interface: NAND Flash 8-bit
  • Supply voltage: 2.7 V to 3.6 V
  • Operating temperature range: -40°C to 85°C
  • Package type: TSOP-48
nand01gw3b2cn6e

Application

  • Storing operating system and application code in smartphones and tablets
  • Storing music, videos, and photos on portable media players and digital cameras
  • Storing data in USB flash drives and memory cards for use in various devices

Specifications

Parameter Value Parameter Value
Rohs Code Yes Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC Part Package Code TSOP
Package Description 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 Pin Count 48
Reach Compliance Code ECCN Code EAR99
HTS Code 8542.32.00.51 Samacsys Manufacturer Micron
Access Time-Max 25000 ns Command User Interface YES
Data Polling NO JESD-30 Code R-PDSO-G48
JESD-609 Code e3 Length 18.4 mm
Memory Density 1073741824 bit Memory IC Type FLASH
Memory Width 8 Moisture Sensitivity Level 3
Number of Functions 1 Number of Sectors/Size 1K
Number of Terminals 48 Number of Words 134217728 words
Number of Words Code 128000000 Operating Mode ASYNCHRONOUS
Operating Temperature-Max 85 °C Operating Temperature-Min -40 °C
Organization 128MX8 Package Body Material PLASTIC/EPOXY
Package Code TSSOP Package Equivalence Code TSSOP48,.8,20
Package Shape RECTANGULAR Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Page Size 2K words Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260 Programming Voltage 3 V
Qualification Status Not Qualified Ready/Busy YES
Seated Height-Max 1.2 mm Sector Size 128K
Standby Current-Max 0.00005 A Supply Current-Max 0.03 mA
Supply Voltage-Max (Vsup) 3.6 V Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3 V Surface Mount YES
Technology CMOS Temperature Grade INDUSTRIAL
Terminal Finish Matte Tin (Sn) Terminal Form GULL WING
Terminal Pitch 0.5 mm Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Toggle Bit NO
Type SLC NAND TYPE Width 12 mm
Write Cycle Time-Max (tWC) 25 ms

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Equivalent Parts

For the NAND01GW3B2CN6E component, you may consider these replacement and alternative parts:

Part Number

Brands

Package

Description

Part Number :   MT29F1G08ABADAWP-IT

Brands :  

Package :  

Description :  

Part Number :   K9F1G08U0C-SCBO

Brands :  

Package :  

Description :  

Part Number :   HY27UF081G2A-TPCB

Brands :  

Package :  

Description :  

Part Number :   S34ML01G100TFI000

Brands :  

Package :  

Description :  

Part Number :   MX30LF1G08AA-TI

Brands :  

Package :  

Description :  

Part points

  • The NAND01GW3B2CN6E chip is a NAND flash memory component produced by Micron Technology. It offers capacity up to 1Gbit and operates at high speeds for data storage and retrieval. It is commonly used in consumer electronics, industrial applications, and automotive systems.
  • Equivalent

    Some equivalent products of NAND01GW3B2CN6E chip are Toshiba TC58NVG0S3EBAI8, Micron MT29F128G08CECCBH7-10N:D, and Samsung K9F1G08UOA-PCB0. These are all NAND flash memory chips with similar specifications and features.
  • Features

    NAND01GW3B2CN6E is a 1Gb SLC NAND Flash memory device with a 3V voltage supply, x8 I/O interface, and a maximum operating frequency of 100MHz. It features high reliability, fast program/erase speeds, and low power consumption, making it suitable for automotive, industrial, and consumer applications.
  • Pinout

    The NAND01GW3B2CN6E is a NAND flash memory chip with a 8-pin configuration. Pin functions typically include power supply (Vcc and GND), chip enable (CE), input/output data (I/O), and address inputs (A0-A15). Additional pins may be used for features like write protect and device identification.
  • Manufacturer

    The manufacturer of the NAND01GW3B2CN6E is Toshiba. Toshiba is a multinational conglomerate company based in Japan known for producing a wide range of products, including electronics, semiconductors, and storage devices. They are one of the leading manufacturers of NAND flash memory and are known for their high-quality and reliable products in the technology industry.
  • Application Field

    The NAND01GW3B2CN6E is commonly used in mobile phones, digital cameras, tablets, and other portable electronic devices for storing data, such as photos, videos, music, and documents. It is also used in automotive systems, industrial equipment, and IoT devices for data storage and processing purposes.
  • Package

    The NAND01GW3B2CN6E chip is packaged in a TSOP-48 form with a size of 12mm x 20mm x 1.2mm.

Datasheet PDF

Preliminary Specification NAND01GW3B2CN6E PDF Download

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

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