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ST NAND01GW3B2BN6F
The NAND01GW3B2BN6F is a flash memory component that features 128 megabits organized in an 8-bit configuration and comes in a PDSO48 package."
Brands: Micron Technology
Mfr.Part #: NAND01GW3B2BN6F
Datasheet: NAND01GW3B2BN6F Datasheet (PDF)
Package/Case: TSOP
Product Type: Memory
RoHS Status:
Stock Condition: 2123 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomNAND01GW3B2BN6F General Description
The NAND01GW3B2BN6F is a NAND flash memory chip manufactured by a company such as Toshiba, Micron, or Samsung. It belongs to the NAND flash memory family, typically used in various electronic devices like smartphones, tablets, SSDs, and USB flash drives for data storage. This specific chip likely has a storage capacity of 1 gigabit (Gb), which translates to about 128 megabytes (MB) of data storage. The "01" in the part number suggests it's a first-generation product within its series. The "GW3B2" likely denotes certain technical specifications such as interface type, voltage, or speed grade. The "BN6F" might specify the package type and configuration.NAND flash memory chips are characterized by their ability to retain data even when powered off, making them ideal for mass data storage in portable devices. They operate on the principle of electrically erasable programmable read-only memory (EEPROM), allowing for high-speed read and write operations. This particular chip, being a common component in electronic devices, adheres to industry standards for reliability, performance, and compatibility
Features
Application
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | NAND Flash | Package / Case | TSOP |
| Memory Size | 1 Gbit | Interface Type | Parallel |
| Organization | 128 M x 8 | Timing Type | Asynchronous |
| Data Bus Width | 8 bit, 16 bit | Supply Voltage - Min | 2.7 V |
| Supply Voltage - Max | 3.6 V | Supply Current - Max | 20 mA |
| Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 85 C |
| Active Read Current - Max | 20 mA | Architecture | Sectored |
| Brand | Micron | Memory Type | NAND |
| Product | NAND Flash | Product Type | NAND Flash |
| Speed | 25 ns | Standard | Not Supported |
| Subcategory | Memory & Data Storage |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The NAND01GW3B2BN6F chip is a NAND flash memory chip manufactured by Toshiba. It offers a storage capacity of 1 Gbit and supports a wide range of applications, including smartphones, tablets, and other electronic devices. The chip features fast read and write speeds, high reliability, and low power consumption.
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Equivalent
Equivalent products of NAND01GW3B2BN6F chip are NAND01GW3B2BN6F, NAND02GW3B2AN6F, and NAND04GW3B2AN6F. These chips are all NAND Flash memory devices from the same manufacturer, Micron Technology. -
Features
NAND01GW3B2BN6F is a 1Gbit (128MB) SLC NAND flash memory from Micron with a voltage range of 1.7-1.95V, operating temperature range of -40°C to 85°C, and support for small page size operations. It has a NAND interface, ESD protection, and advanced memory management capabilities. -
Pinout
The NAND01GW3B2BN6F is a 8-pin NAND Flash memory chip with a capacity of 1 Gbit (128MB). Pin functions are: pin 1 (A0) for address input, pin 2 (A1) for address input, pin 3 (WE#) for Write Enable input, pin 4 (CLE) for Command Latch Enable input, pin 5 (ALE) for Address Latch Enable input, pin 6 (CE#) for Chip Enable input, pin 7 (CLE) for Command Latch Enable input, and pin 8 (Vcc) for power supply. -
Manufacturer
The manufacturer of the NAND01GW3B2BN6F is Micron Technology, Inc. They are a multinational corporation specializing in computer memory and data storage technology. Micron is one of the largest memory chip manufacturers in the world, providing solutions for a variety of industries such as consumer electronics, automotive, and enterprise data centers. -
Application Field
The NAND01GW3B2BN6F is commonly used in applications that require high-density storage solutions, such as SSDs, digital cameras, gaming consoles, and mobile devices. It is also used in industrial applications, telecommunications, automotive, and IoT devices. Its high performance, reliability, and low power consumption make it ideal for a wide range of applications. -
Package
The NAND01GW3B2BN6F chip is in a BGA package type, with a form factor of FBGA-63, and a size of 9.5mm x 12.5mm.
Datasheet PDF
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