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ST NAND512W3A2BN6E
SLC NAND Flash Parallel 3V/3.3V 512M-bit 64M x 8 12us 48-Pin TSOP Tube
Brands: STMicroelectronics, Inc
Mfr.Part #: NAND512W3A2BN6E
Datasheet: NAND512W3A2BN6E Datasheet (PDF)
Package/Case: TSOP-1-48
RoHS Status:
Stock Condition: 3817 pcs, New Original
Product Type: Memory
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $20.633 | $20.633 |
| 200 | $8.233 | $1646.600 |
| 576 | $7.958 | $4583.808 |
| 1152 | $7.822 | $9010.944 |
In Stock:3817 PCS
NAND512W3A2BN6E General Description
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP
Features
- It has a capacity of 512 megabytes.
- It uses a NAND interface for data transfer.
- It operates with a supply voltage of 2.7V to 3.6V.
- It has a page size of 2KB and a block size of 128 pages.
- It has a maximum data transfer rate of 52 megabytes per second.
Application
- Consumer Electronics: Used in devices such as smartphones, tablets, digital cameras, USB drives, and portable media players for data storage and firmware updates.
- Embedded Systems: Employed in embedded systems for program storage, configuration data, and firmware updates in applications such as industrial automation, automotive, and medical devices.
- Solid-State Drives (SSDs): Utilized as storage components in SSDs, providing high-speed data access and reliable storage for computers and servers.
- Networking Equipment: Found in network routers, switches, and servers for firmware storage and data caching.
- Industrial Control: Used in industrial control systems and automation equipment for program storage and data logging.
- Automotive Electronics: Employed in automotive applications for storing firmware, calibration data, and other non-volatile information.
- Smart Grid Systems: Utilized in energy metering and monitoring systems for data storage and firmware updates.
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Name | NAND512W3A2BN6E | Manufacturer | Micron Technology |
| Memory Type | NAND Flash | Memory Size | 512 Mbit |
| Organization | 64M x 8 | Interface | Parallel |
| Supply Voltage | 2.7V to 3.6V | Access Time | 200 ns |
| Operating Temperature Range | -40°C to +85°C | Package / Case | TSOP-48 |
| Packaging | Tube |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Equivalent Parts
For the NAND512W3A2BN6E component, you may consider these replacement and alternative parts:
Part Number
Brands
Package
Description
Part Number : K9K8G08U0A
Brands : Samsung
Package :
Description : This is a 512 megabit (64 megabyte) NAND Flash memory device with similar specifications to the NAND512W3A2BN6E. It utilizes SLC NAND technology and is available in various package types.
Part Number : TC58NVG2S0HRAIG
Brands : Toshiba
Package :
Description : This is another 512 megabit NAND Flash memory device with comparable features. It is based on SLC NAND technology and is offered in different package options.
Part Number : MX30LF512G18AC
Brands : Macronix
Package :
Description : This is a 512 megabit NAND Flash memory device that offers similar storage capacity and SLC NAND technology. It is available in various package types to suit different application requirements.
Part points
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The NAND512W3A2BN6E chip is a NAND flash memory chip with a capacity of 512 gigabits. It is commonly used in a variety of electronic devices for data storage, such as smartphones, tablets, and solid-state drives. The chip offers high speed and reliability, making it a popular choice for memory storage applications.
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Equivalent
The equivalent products of NAND512W3A2BN6E chip are Micron MT29F4G08ABADAH4, Winbond W25N05JW, and Cypress S29GL512S10TFI013. These chips have similar specifications like NAND flash memory, 512Mb capacity, an asynchronous interface, and a 48-ball grid array package. -
Features
NAND512W3A2BN6E is a 512Gb 3-bit TLC NAND flash memory with a synchronous interface. It offers low power consumption, high storage capacity, and fast data transfer rates. It is designed for use in solid-state drives, tablets, smartphones, and other storage devices requiring high-performance flash memory. -
Pinout
The NAND512W3A2BN6E is a 32Gb, 3.3V NAND flash memory chip with a 48-pin TSOP package. Its functions include storing data for electronic devices, such as smartphones, tablets, and computers. -
Manufacturer
The manufacturer of the NAND512W3A2BN6E is Samsung. Samsung is a South Korean multinational conglomerate company that specializes in various industries including electronics, telecommunications, and semiconductors. They are one of the world's largest manufacturers of consumer electronics and semiconductor products. -
Application Field
The NAND512W3A2BN6E is commonly used in embedded systems, consumer electronics, automotive applications, and industrial equipment for data storage and code execution. Its low power consumption, high reliability, and fast access times make it ideal for a wide range of applications that require non-volatile memory storage. -
Package
The NAND512W3A2BN6E chip is in a BGA (Ball Grid Array) package type, with a form factor of 14 x 18 mm, and a size of 512 megabits (64 megabytes).
Datasheet PDF
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