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ST NAND08GW3B2CN6
NAND Flash Parallel 3V/3.3V 8G-bit 1G x 8 25us 48-Pin TSOP Tube
Brands: Numonyx Memory Solutions
Mfr.Part #: NAND08GW3B2CN6
Datasheet: NAND08GW3B2CN6 Datasheet (PDF)
Package/Case: TSOP48
Product Type: Memory
RoHS Status:
Stock Condition: 3375 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomNAND08GW3B2CN6 General Description
NAND08GW3B2CN6 is a type of NAND Flash memory chip manufactured by Micron Technology. Here are some of its features:
Features
- It has a capacity of 8 gigabits (1 gigabyte) and uses a 3-bit per cell (TLC) architecture.
- It uses a NAND interface and operates at a voltage range of 2.7V to 3.6V.
- It has a maximum program/erase cycle endurance of 3000 cycles and a retention time of up to 3 months at 85°C.
Application
- Consumer electronics such as smartphones, tablets, and portable media players.
- Solid-state drives (SSDs) used in desktops, laptops, and servers.
- Automotive applications such as infotainment systems and advanced driver-assistance systems (ADAS).
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Source Content uid | NAND08GW3B2CN6 | Rohs Code | No |
| Part Life Cycle Code | Transferred | Ihs Manufacturer | STMICROELECTRONICS |
| Part Package Code | TSOP | Package Description | TSOP1, |
| Pin Count | 48 | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | HTS Code | 8542.32.00.51 |
| Access Time-Max | 35 ns | JESD-30 Code | R-PDSO-G48 |
| JESD-609 Code | e0 | Length | 18.4 mm |
| Memory Density | 8589934592 bit | Memory IC Type | FLASH |
| Memory Width | 8 | Number of Functions | 1 |
| Number of Terminals | 48 | Number of Words | 1073741824 words |
| Number of Words Code | 1000000000 | Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Max | 85 °C | Operating Temperature-Min | -40 °C |
| Organization | 1GX8 | Package Body Material | PLASTIC/EPOXY |
| Package Code | TSOP1 | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE, THIN PROFILE | Parallel/Serial | PARALLEL |
| Programming Voltage | 3 V | Qualification Status | Not Qualified |
| Seated Height-Max | 1.2 mm | Supply Voltage-Max (Vsup) | 3.6 V |
| Supply Voltage-Min (Vsup) | 2.7 V | Supply Voltage-Nom (Vsup) | 3 V |
| Surface Mount | YES | Technology | CMOS |
| Temperature Grade | INDUSTRIAL | Terminal Finish | TIN LEAD |
| Terminal Form | GULL WING | Terminal Pitch | 0.5 mm |
| Terminal Position | DUAL |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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![Individual packaging]( "Individual packaging")
Step4 :Individual packaging
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![Packaging boxes]( "Packaging boxes")
Step5 :Packaging boxes
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![bar-code shipping tag]( "bar-code shipping tag")
Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Equivalent Parts
For the NAND08GW3B2CN6 component, you may consider these replacement and alternative parts:
Part Number
Brands
Package
Description
Part Number : MT29F8G08ABACAH4-ITD
Brands :
Package :
Description :
Part Number : H27UCG8T2ETR-BC
Brands :
Package :
Description :
Part Number : K9F8G08U0B-PIB0
Brands :
Package :
Description :
Part points
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The NAND08GW3B2CN6 is a NAND flash memory chip manufactured by Micron Technology. It offers 8 gigabytes of storage capacity and operates at high speeds for data storage and retrieval. This chip is commonly used in a variety of electronic devices such as smartphones, tablets, and solid-state drives.
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Equivalent
Some equivalent products of NAND08GW3B2CN6 chip are Toshiba TC58NYG0S3EBAI4, Micron MT29F8G08ABABAWP, Samsung K9GAG08U0E, and Hynix H27UCG8T2MYR. These chips are all compatible with NAND08GW3B2CN6 in terms of functionality and specifications. -
Features
NAND08GW3B2CN6 is a 8Gb NAND flash memory IC that features a page size of 16KB, a block size of 256 pages, a program/erase cycle endurance of 3000 cycles, and a supply voltage range of 2.7V to 3.6V. It also has a x8 I/O interface, a sequential read speed of up to 70MB/s, and a 3.3V Vccq voltage for the core circuit. -
Pinout
The NAND08GW3B2CN6 is an 8-channel NAND gate with a maximum input voltage of 3.6V. It has a pin count of 14, with the following functions: Pin 1 and 14 - VCC, Pin 2 and 13 - Output 1, Pin 3 and 12 - Output 2, Pin 4 and 11 - NAND input 1, Pin 5 and 10 - NAND input 2, Pin 6 and 9 - Enable, Pin 7 and 8 - GND. -
Manufacturer
The manufacturer of the NAND08GW3B2CN6 is Micron Technology, Inc. Micron is a multinational corporation specializing in the development and production of computer memory and data storage solutions. They are one of the leading providers of NAND flash memory, DRAM modules, and solid-state drives used in a variety of electronic devices. -
Application Field
The NAND08GW3B2CN6 is a NAND flash memory device commonly used in a variety of applications such as smartphones, tablet PCs, digital cameras, and solid-state drives. It is suitable for data storage in consumer electronics and computing devices that require high-speed and reliable storage solutions. -
Package
The NAND08GW3B2CN6 chip is a 8GB NAND flash memory chip. It comes in a TSOP-48 package type and has a form factor of BGA.
Datasheet PDF
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