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Infineon IRFB23N20DPBF
N-Channel 200 V 24A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-220AB
Brands: Infineon Technologies Corporation
Mfr.Part #: IRFB23N20DPBF
Datasheet: IRFB23N20DPBF Datasheet (PDF)
Package/Case: TO-220AB
Product Type: Transistors
RoHS Status:
Stock Condition: 2812 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomIRFB23N20DPBF General Description
N-Channel 200 V 24A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-220AB
Features
- RoHS Compliant
- Industry-leading quality
- Fully Characterized Avalanche Voltage and Current
- Low Gate-to-Drain Charge to Reduce Switching Losses
- Fully Characterized Capacitance Including Effective Coss to Simplify Design
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| RHoS | yes | PBFree | yes |
| HalogenFree | yes | Manufacturer: | Infineon |
| Product Category: | MOSFET | RoHS: | Details |
| Technology: | Si | Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 | Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel | Vds - Drain-Source Breakdown Voltage: | 200 V |
| Id - Continuous Drain Current: | 24 A | Rds On - Drain-Source Resistance: | 100 mOhms |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V | Vgs th - Gate-Source Threshold Voltage: | 5.5 V |
| Qg - Gate Charge: | 57 nC | Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C | Pd - Power Dissipation: | 170 W |
| Channel Mode: | Enhancement | Packaging: | Tube |
| Brand: | Infineon Technologies | Configuration: | Single |
| Fall Time: | 16 ns | Forward Transconductance - Min: | 13 S |
| Height: | 15.65 mm | Length: | 10 mm |
| Product Type: | MOSFET | Rise Time: | 32 ns |
| Factory Pack Quantity: | 1000 | Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel | Typical Turn-Off Delay Time: | 26 ns |
| Typical Turn-On Delay Time: | 14 ns | Width: | 4.4 mm |
| Unit Weight: | 0.068784 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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![Individual packaging]( "Individual packaging")
Step4 :Individual packaging
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![Packaging boxes]( "Packaging boxes")
Step5 :Packaging boxes
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![bar-code shipping tag]( "bar-code shipping tag")
Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IRFB23N20DPBF is a power MOSFET chip designed for high-speed switching and efficient power management applications. It has a drain-source voltage rating of 200V, a continuous drain current of 50A, and low on-resistance for improved performance. The chip utilizes advanced technology and features a compact design, making it suitable for various industrial and automotive applications.
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Equivalent
Some equivalent products of the IRFB23N20DPBF chip include IRF1010E, IRF540N, IRF3205, and IRFB3077. -
Features
The IRFB23N20DPBF is a power MOSFET transistor designed for high-performance switching applications. It features a low on-resistance, high current capability, and fast switching speed. It also has a built-in body diode for efficient freewheeling operation in inductive loads. -
Pinout
The IRFB23N20DPBF is a 3-pin power MOSFET. The pin count includes the gate (G), drain (D), and source (S). Its function is to control the flow of current between the drain and source terminals by the gate voltage, making it suitable for various switching applications. -
Manufacturer
The manufacturer of the IRFB23N20DPBF is International Rectifier, which is a semiconductor company specializing in the design and production of power management technology. -
Application Field
The IRFB23N20DPBF is a power MOSFET typically used in applications such as motor control, power supply, and inverter circuits. -
Package
The IRFB23N20DPBF chip is in a TO-220AB package type, with a through-hole form. The package size measures approximately 10.6mm x 9.35mm x 4.57mm.
Datasheet PDF
We provide high quality products, thoughtful service and after sale guarantee
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products
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