Infineon IPP90R1K2C3
High voltage N-Channel MOSFET with 5.1A current rating, TO220-3 packaging, and CoolMOS C3 technology
Brands: Infineon
Mfr.Part #: IPP90R1K2C3
Datasheet: IPP90R1K2C3 Datasheet (PDF)
Package/Case: TO-220
RoHS Status:
Stock Condition: 2095 pcs, New Original
Product Type: Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $1.118 | $1.118 |
10 | $1.094 | $10.940 |
30 | $1.078 | $32.340 |
100 | $1.062 | $106.200 |
In Stock:2095 PCS
IPP90R1K2C3 General Description
The IPP90R1K2C3 is a power MOSFET transistor manufactured by Infineon Technologies. It is part of the OptiMOS 5 family of products and is designed for use in high efficiency and high power density applications in markets such as server, telecom, and industrial power supplies.Key specifications of the IPP90R1K2C3 include a drain-source voltage (VDS) of 900V, a continuous drain current (ID) of 44A, and a low on-resistance (RDS(on)) of 90mOhms. This MOSFET also has a gate threshold voltage (VGS(th)) of 4V and a total gate charge (Qg) of 88nC.The IPP90R1K2C3 features a robust and reliable design, with low switching and conduction losses that contribute to high efficiency in power conversion applications. It is optimized for fast switching speeds and low parasitic capacitances, making it ideal for high frequency and high power applications.
Features
- Optimized for low on-resistance
- Enhanced efficiency for power applications
- Fast switching speeds for improved performance
- High blocking voltage for reliable operation
- Low gate charge for reduced power losses
- Designed for use in various industrial and automotive applications
Application
- Power supplies
- DC-DC converters
- Motor control
- Lighting applications
- Switching applications
- Industrial automation
- Renewable energy systems
- Welding equipment
- Electric vehicles
- Battery management systems
Specifications
Parameter | Value | Parameter | Value |
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IDpuls max | 10.0 A | VGS(th) max | 3.5 V |
VGS(th) min | 2.5 V | RthJC max | 1.5 K/W |
RthJA max | 62.0 K/W | Operating Temperature min | -55.0 °C |
Ptot max | 83.0 W | VDS max | 900.0 V |
Polarity | N | ID max | 5.1 A |
RDS (on) max | 1200.0 mΩ | Mounting | THT |
Special Features | price/performance |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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IPP90R1K2C3 is a power MOSFET chip developed by Infineon Technologies. It offers low on-state resistance, making it suitable for high-efficiency power conversion applications. The chip features a standard TO-220 package and can handle high currents with low power dissipation. The IPP90R1K2C3 chip is used in various power electronics applications such as industrial automation, consumer goods, and automotive systems.
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Features
The IPP90R1K2C3 is a power MOSFET transistor with a VDS rating of 900V and a continuous drain current of 39A. It is designed for high-speed switching applications, offering low on-state resistance, high current capability, and efficient power dissipation. The transistor is housed in a TO220 package, allowing for easy integration into various electronic circuits. -
Pinout
The IPP90R1K2C3 is a power MOSFET with a TO-220 package. It has three pins - gate, drain, and source. The gate pin controls the flow of current between the drain and source pins when sufficient voltage is applied. This MOSFET is commonly used in power applications due to its low on-resistance and high switching capability. -
Manufacturer
The manufacturer of the IPP90R1K2C3 is Infineon Technologies. It is a multinational semiconductor company that specializes in designing and manufacturing a wide range of electronic components and systems. Infineon Technologies is known for its expertise in power semiconductors, microcontrollers, and sensors, and caters to various industries such as automotive, industrial, and consumer technologies. -
Application Field
The IPP90R1K2C3 is a power MOSFET transistor designed for applications such as power supplies, DC-DC converters, motor control, and other high voltage switching applications. Its low on-resistance, high current capability, and fast switching speed make it suitable for various power management systems. -
Package
The IPP90R1K2C3 chip is a power MOSFET transistor with a TO-220 package type. It has a single channel and a power module form. The size of the chip in the TO-220 package is approximately 10.4 mm x 9.4 mm.
Datasheet PDF
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