Infineon IPN60R2K1CE

Part points

• The IPN60R2K1CE chip is a power MOSFET, also known as a metal-oxide-semiconductor field-effect transistor. It is designed for high-frequency applications using the CoolMOSTM technology. This chip offers low on-state resistance and high efficiency, making it suitable for various power supply applications. It operates efficiently with low power consumption and allows for compact designs.

• Equivalent

  Some equivalent products of the IPN60R2K1CE chip may include the STW34NB20 transistor, the IRF3055 power MOSFET, and the IRLB3034PBF MOSFET. These products have similar functionality and may be used as substitutes in various electronic applications.

• Features

  The IPN60R2K1CE is a MOSFET power transistor with a voltage rating of 600V and a current rating of 52A. It has low on-state resistance, allowing for efficient power management. The transistor is also designed with enhanced thermal properties, enabling it to handle high power dissipation without overheating.

• Pinout

  The IPN60R2K1CE is a power MOSFET with a pin count of 3. The pins are labeled as Drain (D), Gate (G), and Source (S). The Drain pin is used for power input, the Gate pin controls the voltage to turn the MOSFET on and off, and the Source pin is the ground or reference point for the MOSFET.

• Manufacturer

  The manufacturer of the IPN60R2K1CE is Infineon Technologies. It is a German semiconductor manufacturing company that produces a wide range of products including power management semiconductors, sensors, microcontrollers, and automotive solutions.

• Application Field

  The IPN60R2K1CE is a power MOSFET transistor used in various applications such as motor control, power supplies, and inverters. It is commonly used in industrial and automotive systems, as well as consumer electronics where high power switching capabilities are required.

• Package

  The IPN60R2K1CE chip is available in a TO-220 package.