Infineon IPD60N10S4L-12

Part points

• The IPD60N10S4L-12 is a power MOSFET chip designed for high power switching applications. It features a low on-resistance of 0.01 ohms, a maximum drain-source voltage of 100V, and a current rating of 60A. This chip is commonly used in power supply circuits, motor control, and other high-current applications where efficient switching and reduced power losses are essential.

• Equivalent

  The equivalent products of the IPD60N10S4L-12 chip are IPD60N10S411ATMA1 and IPD60N10S411AXMA1. These are N-channel power MOSFETs with similar specifications and characteristics, manufactured by Infineon Technologies.

• Features

  1. N-channel power MOSFET 2. RDS(on) of 0.012 ohms 3. Drain current of 60A 4. 100% avalanche tested 5. Low gate charge for improved efficiency 6. Suitable for use in high power applications such as motor control and switching power supplies.

• Pinout

  The IPD60N10S4L-12 is a 60A, 100V, N-channel power MOSFET in a TO-252 package. It has 3 pins - gate, drain, and source. The pinout is typically gate (1), drain (2), and source (3). It is commonly used in power supply and motor control applications.

• Manufacturer

  Infineon Technologies is the manufacturer of the IPD60N10S4L-12. They are a German company specializing in semiconductor solutions for automotive, industrial, and consumer electronics industries. Infineon Technologies is one of the largest semiconductor manufacturers in the world, known for their innovative products and technologies.

• Application Field

  The IPD60N10S4L-12 can be used in various applications including power supplies, motor controls, inverters, and industrial equipment. It is designed for high efficiency and reliability in applications requiring high power density and fast switching speeds. Its low on-state resistance and high current capability make it ideal for high power applications.

• Package

  The IPD60N10S4L-12 chip is in a TO-252 package type, with a form of surface mount and a size of 6.9mm x 6.3mm x 1.9mm. It is a MOSFET with a 60V voltage rating and 60A current rating.