This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Infineon IPB60R190C6 48HRS

MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6

ISO14001 ISO9001 DUNS

Brands: Infineon

Mfr.Part #: IPB60R190C6

Datasheet: IPB60R190C6 Datasheet (PDF)

Package/Case: D2PAK (TO-263)

RoHS Status:

Stock Condition: 2926 pcs, New Original

Product Type: Transistors

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $3.411 $3.411
10 $2.973 $29.730
30 $2.714 $81.420
100 $2.352 $235.200
500 $2.229 $1114.500
1000 $2.175 $2175.000

In Stock:2926 PCS

- +

Quick Quote

Please submit RFQ for IPB60R190C6 or email to us: Email: [email protected], we will contact you within 12 hours.

IPB60R190C6 General Description

N-Channel 600 V 20.2A (Tc) 151W (Tc) Surface Mount PG-TO263-3

ipb60r190c6

Specifications

Parameter Value Parameter Value
IDpuls max 59.0 A VGS(th) max 3.5 V
VGS(th) min 2.5 V RthJC max 0.83 K/W
RthJA max 62.0 K/W Operating Temperature min -55.0 °C
Ptot max 151.0 W VDS max 600.0 V
Polarity N ID max 20.2 A
RDS (on) max 190.0 mΩ Mounting SMT
Package D2PAK (TO-263)

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The IPB60R190C6 chip is a high-voltage power MOSFET designed for use in various applications such as switching power supplies, motor drives, and automotive systems. It offers low on-resistance, high current capability, and low gate charge, providing an efficient and reliable solution. With its advanced features and compact size, the IPB60R190C6 chip is a popular choice for power electronics designers.
  • Equivalent

    Some equivalent products to the IPB60R190C6 chip include Infineon's IPB60R199CP and IPB60R099CP offerings, Texas Instruments' CSD19536KTT and CSD19538KTT, On Semiconductor's NTMFS5C628NL and NTMFS5C639NL, and Nexperia's PSMN4R5-80PS and PSMN4R5-100PS. These MOSFETs share similar specifications and can be used as alternatives to the IPB60R190C6.
  • Features

    The IPB60R190C6 is a power MOSFET transistor. It features a low on-resistance of 0.19 ohm, enabling high energy efficiency. It has a 600V voltage rating and a 48A current rating, making it suitable for power electronics applications. Additionally, it has a TO-263-7 package and a gate-source voltage of ±20V.
  • Pinout

    The IPB60R190C6 is a MOSFET transistor with a TO-263 package. It has 3 pins: Gate, Drain, and Source. The Gate pin is used to control the switching of the transistor, while the Drain and Source pins form the current path for the device.
  • Manufacturer

    Infineon Technologies AG is the manufacturer of the IPB60R190C6. It is a German semiconductor company that designs, develops, and produces various semiconductor solutions, including power semiconductors, integrated circuits, and sensor products.
  • Application Field

    The IPB60R190C6 is an N-channel power MOSFET commonly used in applications such as power supplies, motor drives, and lighting fixtures. It is also suitable for use in battery protection circuits, automotive systems, and industrial control systems.
  • Package

    The IPB60R190C6 chip is available in a TO-263 package type, also known as D2PAK. It has a 3-pin single gauge form and a length of 10.2 mm, a width of 9.65 mm, and a height of 4.6 mm.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

Ratings and Reviews

Ratings
Please rate the product !
Please enter a comment

Please submit comments after logging into your account.

Submit

Recommend

  • BSZ146N10LS5ATMA1

    BSZ146N10LS5ATMA1

    Infineon Technologies Corporation

    Power Field-Effect Transistor,

  • BSZ096N10LS5ATMA1

    BSZ096N10LS5ATMA1

    Infineon Technologies Corporation

    Trans MOSFET N-CH 100V 11A 8-Pin TSDSON EP T/R

  • IRFB4410ZPBF

    IRFB4410ZPBF

    Infineon

    IRFB4410ZPBF - Power Transistor Utilizing Trench T...

  • BSC070N10NS5ATMA1

    BSC070N10NS5ATMA1

    Infineon Technologies Corporation

    Trans MOSFET N-CH 100V 80A 8-Pin TDSON EP T/R

  • ISC060N10NM6ATMA1

    ISC060N10NM6ATMA1

    Infineon Technologies Corporation

    Trans MOSFET N-CH 100V 15A 8-Pin TDSON EP T/R

  • IRFH5010TRPBF

    IRFH5010TRPBF

    Infineon Technologies Corporation

    100V Single N-Channel HEXFET Power MOSFET in a PQF...