Infineon IPB180N10S4-02

Part points

• The IPB180N10S4-02 is a power MOSFET chip designed for high-performance applications in various electronic devices. It features low on-resistance, high current capability, and efficient power dissipation. The chip can be used in power management circuits, motor control systems, DC-DC converters, and other applications requiring robust and reliable power switching.

• Equivalent

  Possible equivalent products for the IPB180N10S4-02 chip include the SCT3030KL, IRFB4110, and SPF8N80C3. These MOSFETs offer similar specifications and may be suitable replacements for the IPB180N10S4-02 in various applications.

• Features

  The IPB180N10S4-02 is a power MOSFET transistor with a Vds voltage rating of 100V, a drain current of 23A, and a low on-resistance of 0.018 ohms. It is designed for switching applications in various power electronics devices, offering excellent performance and efficiency.

• Pinout

  The IPB180N10S4-02 is a MOSFET transistor with a TO263-3 package. It has 3 pins: gate (G), drain (D), and source (S). The gate pin is used to control the flow of current between the drain and source. This transistor is designed to handle high voltage and current, suitable for various power switching applications.

• Manufacturer

  The manufacturer of the IPB180N10S4-02 is Infineon Technologies AG. It is a multinational semiconductor manufacturer.

• Application Field

  The IPB180N10S4-02 is a power MOSFET transistor typically used in various electronic applications, including motor control systems, power supplies, and inverters. It is capable of handling high voltage and current levels, making it suitable for industrial and automotive applications that require efficient power conversion and control.

• Package

  The IPB180N10S4-02 chip is a power MOSFET that comes in a TO263-7L package. It has a standard mount form and a size of 10 mm x 12 mm.