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SI2356DS-T1-GE3
40 volts rated voltage
Brands: Vishay
Mfr.Part #: SI2356DS-T1-GE3
Datasheet: SI2356DS-T1-GE3 Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 5674 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Small Signal Field-Effect Transistor, 4.3A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Features
Application
DC/DC Converter |Load Switch |LED Backlighting |Power ManagementSpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 40 V |
| Id - Continuous Drain Current | 4.3 A | Rds On - Drain-Source Resistance | 51 mOhms |
| Vgs - Gate-Source Voltage | - 12 V, + 12 V | Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Qg - Gate Charge | 3.8 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.7 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 6 ns |
| Height | 1.45 mm | Length | 2.9 mm |
| Product Type | MOSFET | Rise Time | 12 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 13 ns |
| Typical Turn-On Delay Time | 6 ns | Width | 1.6 mm |
| Part # Aliases | SI2356DS-T1-BE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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SI2356DS-T1-GE3 is an advanced power MOSFET chip developed by Vishay Siliconix. It offers low on-resistance and high current handling capability, making it suitable for various applications in power management and conversion systems. The chip is designed to improve efficiency and reduce power losses, enabling enhanced performance and compact device designs.
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Features
SI2356DS-T1-GE3 is a P-channel MOSFET transistor with a compact industry-standard SOT-23 package. It has a maximum drain-source voltage of 20V, continuous drain current of 3A, and low on-resistance. It is suitable for low-power switching applications, offering reliable performance, compact size, and ease of use. -
Pinout
The SI2356DS-T1-GE3 is a dual P-channel enhancement-mode transistor. It has a pin count of 6 pins. The function of this transistor is to control the flow of electrical current between the source and drain terminals, allowing for switching and amplification of electrical signals. -
Manufacturer
The manufacturer of the SI2356DS-T1-GE3 is Vishay Intertechnology, Inc. Vishay is an American company that specializes in the production and supply of discrete semiconductors and passive electronic components. It is a global leader in the industry, providing innovative solutions to a wide range of sectors, including automotive, telecommunications, consumer electronics, and industrial equipment. -
Application Field
The SI2356DS-T1-GE3 is a P-channel MOSFET transistor. It can be used in a variety of applications, such as power management, battery charging, load switching, and DC-DC converters. Its compact size and low on-resistance make it suitable for portable devices, automotive systems, and other small-scale electronics. -
Package
The SI2356DS-T1-GE3 chip has a package type of TSOP-6, a form of Surface Mount, and a size of 2.9mm x 1.6mm.
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