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Infineon IPB026N06N
Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
Brands: Infineon
Mfr.Part #: IPB026N06N
Datasheet: IPB026N06N Datasheet (PDF)
Package/Case: D2PAK (TO-263)
RoHS Status:
Stock Condition: 3859 pcs, New Original
Product Type: Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $2.040 | $2.040 |
| 10 | $1.757 | $17.570 |
| 30 | $1.579 | $47.370 |
| 100 | $1.396 | $139.600 |
| 500 | $1.315 | $657.500 |
| 1000 | $1.279 | $1279.000 |
In Stock:3859 PCS
IPB026N06N General Description
Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN
Features
- VDS (drain-source voltage) rating of 60V
- ID (continuous drain current) rating of 100A
- Low RDS(on) (drain-source on-resistance) of 2.6mΩ
- TO-263 package
Application
- Switching regulators
- DC-DC converters
- Motor control
- Power supplies
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| IDpuls max | 400.0 A | Ptot max | 136.0 W |
| VDS max | 60.0 V | Package | D2PAK (TO-263) |
| Polarity | N | RDS (on) max | 2.6 mΩ |
| ID max | 100.0 A | VGS(th) max | 3.3 V |
| VGS(th) min | 2.1 V | Operating Temperature max | 175.0 °C |
| Operating Temperature min | -55.0 °C |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Equivalent Parts
For the IPB026N06N component, you may consider these replacement and alternative parts:
Part Number
Brands
Package
Description
Part Number : STP160N06F7
Brands :
Package :
Description :
Part Number : IRF2807
Brands :
Package :
Description :
Part Number : FDP047AN08A0
Brands :
Package :
Description :
Part Number : BSC016N06NS
Brands :
Package : TDSON-8
Description : Trans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R
Part Number : AO4606
Brands :
Package :
Description :
Part points
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The IPB026N06N is a power MOSFET chip designed for use in high-current applications. It offers low on-resistance and high-speed switching capabilities, making it ideal for power management in devices requiring efficient operation. This chip is commonly used in motor control, battery charging, and DC-DC conversion circuits.
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Equivalent
The equivalent products of the IPB026N06N chip are the IPP026N06N3 G and the IRF520N-6PBF. These chips offer similar specifications and can be used as alternatives to the IPB026N06N in various applications requiring a power MOSFET. -
Features
1. Power MOSFET transistor 2. 60V voltage rating 3. 24A continuous drain current 4. N-channel design 5. Low on-resistance of 0.026 ohms 6. Suitable for high-power applications such as motor control and power supplies -
Pinout
The IPB026N06N is a 60 V, 26 A N-channel MOSFET with a TO-263 package. It has 3 pins: Gate, Drain, and Source. The Gate pin controls the flow of current between the Drain and Source pins. -
Manufacturer
The manufacturer of the IPB026N06N is Infineon Technologies AG. It is a German semiconductor company specializing in the development and production of power semiconductors, microcontrollers, and sensors. Infineon Technologies AG is a prominent player in the global semiconductor industry, providing solutions for automotive, industrial, and consumer electronics applications. -
Application Field
The IPB026N06N is commonly used in various applications requiring high power and efficiency, such as motor control, power supplies, and inverters. It can also be used in automotive applications, industrial automation, and renewable energy systems. Its low on-state resistance and robustness make it ideal for high-performance applications. -
Package
The IPB026N06N chip comes in a TO-263 package, with a through-hole mounting form. Its size is 10.6mm x 10.5mm x 3mm.
Datasheet PDF
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