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HGTP20N60A4 48HRS

IGBT for high-voltage switch-mode power supply applications

ISO14001 ISO9001 DUNS

Brands: Onsemi

Mfr.Part #: HGTP20N60A4

Datasheet: HGTP20N60A4 Datasheet (PDF)

Package/Case: TO-220-3

RoHS Status:

Stock Condition: 9,458 pcs, New Original

Product Type: Single IGBTs

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $1.030 $1.030
200 $0.400 $80.000
500 $0.385 $192.500
800 $0.379 $303.200

In Stock: 9,458 PCS

- +

Quick Quote

Please submit RFQ for HGTP20N60A4 or email to us: Email: [email protected], we will contact you within 12 hours.

HGTP20N60A4 General Description

The HGTP20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

Features

  • 40A, 600V @ TC = 110°C
  • Low Saturation Voltage : V CE(sat) = 1.8 V @ I C = 20A
  • Typical Fall Time55ns at TJ = 125°C
  • Low Conduction Loss

Application

  • Other Industrial

Specifications

Parameter Value Parameter Value
Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-220-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.8 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 70 A
Pd - Power Dissipation 290 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series HGTP20N60A4
Brand onsemi / Fairchild Continuous Collector Current 70 A
Continuous Collector Current Ic Max 70 A Gate-Emitter Leakage Current +/- 250 nA
Height 9.4 mm Length 10.67 mm
Product Type IGBT Transistors Factory Pack Quantity 800
Subcategory IGBTs Width 4.83 mm
Part # Aliases HGTP20N60A4_NL

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The HGTP20N60A4 is a high-speed IGBT (Insulated Gate Bipolar Transistor) chip commonly used in power electronics applications. It offers low conduction losses and high switching speeds, making it suitable for applications like motor drives, inverters, and power supplies. With a voltage rating of 600V and a current rating of 40A, it provides efficient power switching in various industrial and automotive systems.
  • Equivalent

    Possible equivalent products of HGTP20N60A4 chip are IRG7PH46U and IRGP50B60PD1. These products have similar specifications and can be used as substitutes for HGTP20N60A4 in various applications.
  • Features

    The HGTP20N60A4 is a MOSFET transistor with a voltage rating of 600V, a current rating of 40A, and a low on-resistance. It features a fast switching speed, making it suitable for high-frequency applications such as power supplies and motor control.
  • Pinout

    The HGTP20N60A4 is a MOSFET with 3 pins: gate (G), drain (D), and source (S). It functions as a high-voltage, high-speed switch in power electronics applications.
  • Manufacturer

    The HGTP20N60A4 is manufactured by Fairchild Semiconductor, which produces power management and semiconductor devices. Fairchild Semiconductor is a global company specializing in various electronic components, including MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), integrated circuits, and power modules for diverse applications in industries like automotive, industrial, and consumer electronics.
  • Application Field

    The HGTP20N60A4 is commonly used in high-power switching applications such as power supplies, motor drives, and induction heating systems. Its high voltage and current ratings make it suitable for these demanding tasks, while its fast switching characteristics contribute to efficient operation.
  • Package

    The HGTP20N60A4 chip is a TO-220 package type, with a through-hole form factor, and its size is approximately 10.5mm x 15.5mm x 4.5mm.

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  • quantity

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