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HGTG5N120BND
Three-pin (with three tabs) TO-247 tube containing a 1200V N-channel Insulated Gate Bipolar Transistor (IGBT) chip rated for 21A current
Brands: Onsemi
Mfr.Part #: HGTG5N120BND
Datasheet: HGTG5N120BND Datasheet (PDF)
Package/Case: TO-247-3
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: IGBT Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $2.818 | $2.818 |
| 10 | $2.466 | $24.660 |
| 30 | $2.022 | $60.660 |
| 90 | $1.810 | $162.900 |
| 510 | $1.712 | $873.120 |
| 1200 | $1.669 | $2002.800 |
In Stock:9458 PCS
HGTG5N120BND General Description
HGTG5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
Features
- 10A, 1200V, TC = 110°C
- Low Saturation Voltage : V CE(sat) = 2.45 V @ I C = 5A
- Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150°C
- Short Circuit Rating
- Low Conduction Loss
Application
- Uninterruptible Power Supply
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | IGBT Transistors | RoHS | Details |
| Technology | Si | Package / Case | TO-247-3 |
| Mounting Style | Through Hole | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.45 V |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 21 A |
| Pd - Power Dissipation | 167 W | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Series | HGTG5N120BND |
| Brand | onsemi / Fairchild | Continuous Collector Current | 21 A |
| Continuous Collector Current Ic Max | 21 A | Gate-Emitter Leakage Current | +/- 250 nA |
| Height | 20.82 mm | Length | 15.87 mm |
| Product Type | IGBT Transistors | Factory Pack Quantity | 450 |
| Subcategory | IGBTs | Width | 4.82 mm |
| Part # Aliases | HGTG5N120BND_NL |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The HGTG5N120BND is a high power, high voltage IGBT (Insulated Gate Bipolar Transistor) chip designed for use in various power electronic applications such as motor drives, power supplies, and inverters. It offers a low on-state voltage drop and high switching speed, making it suitable for high-performance and energy-efficient devices.
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Equivalent
The equivalent products of HGTG5N120BND chip are Infineon's IGW50N65H5, STMicroelectronics STGWT40H65DF2, and Fairchild Semiconductor's FGW15N120HS. These chips are all high-power IGBTs with similar specifications and applications in power electronics. -
Features
1. HGTG5N120BND is a 1200V, 45A IGBT power module. 2. It has a low top-side collector-emitter voltage of 2.2V. 3. Features industry-standard footprint and package design for easy integration. 4. Suitable for high-power applications such as motor control and power supplies. -
Pinout
HGTG5N120BND is a 3-pin IGBT (Insulated Gate Bipolar Transistor) with a pin count of 3. The functions of the pins are: Pin 1 (Emitter), Pin 2 (Gate), and Pin 3 (Collector). It is used for high power switching applications. -
Manufacturer
HGTG5N120BND is manufactured by Fairchild Semiconductor, an American semiconductor company that specializes in power and signal path products. Fairchild Semiconductor was founded in 1957 and is headquartered in San Jose, California. They are known for their innovation in power management technologies for consumer, industrial, and automotive applications. -
Application Field
HGTG5N120BND is a high voltage, fast switching IGBT designed for a wide range of applications including induction heating, welding, motor control, and power supplies. It is commonly used in inverters, converters, and other high power electronic systems that require efficient and reliable switching performance. -
Package
The HGTG5N120BND chip is a IGBT transistor in TO-247 package type, with a form of Molded Plastic, and a size of 22.1mm x 5.2mm x 38.94mm.
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