HGTG20N60A4D
IGBT 600 V 70 A 290 W Through Hole TO-247-3
Brands: Onsemi
Mfr.Part #: HGTG20N60A4D
Datasheet: HGTG20N60A4D Datasheet (PDF)
Package/Case: TO-247-3
Product Type: IGBT Transistors
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomHGTG20N60A4D General Description
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Features
- <100kHz Operation At 390V, 20A
- 200kHz Operation At 390V, 12A
- 600V Switching SOA Capability
- Typical Fall Time . . . . . . . . . . . . . . . . .55ns at TJ = 125&°C
- Low Conduction Loss
- Temperature Compensating SABER™ Model
Application
- Other Industrial
Specifications
Parameter | Value | Parameter | Value |
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Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-247-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 1.8 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 70 A |
Pd - Power Dissipation | 290 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | HGTG20N60A4D |
Brand | onsemi / Fairchild | Continuous Collector Current | 70 A |
Continuous Collector Current Ic Max | 70 A | Gate-Emitter Leakage Current | +/- 250 nA |
Height | 20.82 mm | Length | 15.87 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 450 |
Subcategory | IGBTs | Width | 4.82 mm |
Part # Aliases | HGTG20N60A4D_NL |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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HGTG20N60A4D is a power semiconductor chip designed for high-voltage applications. It is a Insulated Gate Bipolar Transistor (IGBT) that can handle up to 600V and 40A of current. This chip is commonly used in power electronics circuits to efficiently switch and control high-power loads such as motors, inverters, and power supplies.
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Equivalent
Some equivalent products of the HGTG20N60A4D chip are the IRG4PC50UD and the IRGPC50UD. -
Features
The HGTG20N60A4D is a high power IGBT (Insulated Gate Bipolar Transistor) module. It features a voltage rating of 600V, a current rating of 20A, and a low switching loss for efficient operation. It has a compact design, high reliability, and is suitable for use in various power electronics applications. -
Pinout
The HGTG20N60A4D is a 20-pin IGBT (Insulated Gate Bipolar Transistor) module used for power electronics applications. It is designed for high voltage and high current switching applications, offering low power loss and high reliability. The pin count and specific functions of each pin can be found in the datasheet provided by the manufacturer. -
Manufacturer
The manufacturer of the HGTG20N60A4D is Infineon Technologies AG. It is a multinational semiconductor and system solutions company. -
Application Field
The HGTG20N60A4D is a high voltage IGBT (Insulated Gate Bipolar Transistor) commonly used in power electronics applications. It finds broad application in motor drives, DC-DC converters, UPS systems, welding equipment, and other high power systems requiring efficient switching capabilities and high voltage handling. -
Package
The HGTG20N60A4D chip is in a TO-247 package type, with a through-hole mounting form. It has a size of approximately 15.75mm (length) x 5.21mm (width) x 20.57mm (height).
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