This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

HGTG20N60A4D

IGBT 600 V 70 A 290 W Through Hole TO-247-3

ISO14001 ISO9001 DUNS

Brands: Onsemi

Mfr.Part #: HGTG20N60A4D

Datasheet: HGTG20N60A4D Datasheet (PDF)

Package/Case: TO-247-3

Product Type: IGBT Transistors

RoHS Status:

Stock Condition: 9458 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Add To Bom

Quick Quote

Please submit RFQ for HGTG20N60A4D or email to us: Email: [email protected], we will contact you within 12 hours.

HGTG20N60A4D General Description

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Features

  • <100kHz Operation At 390V, 20A
  • 200kHz Operation At 390V, 12A
  • 600V Switching SOA Capability
  • Typical Fall Time . . . . . . . . . . . . . . . . .55ns at TJ = 125&°C
  • Low Conduction Loss
  • Temperature Compensating SABER™ Model

Application

  • Other Industrial

Specifications

Parameter Value Parameter Value
Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.8 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 70 A
Pd - Power Dissipation 290 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series HGTG20N60A4D
Brand onsemi / Fairchild Continuous Collector Current 70 A
Continuous Collector Current Ic Max 70 A Gate-Emitter Leakage Current +/- 250 nA
Height 20.82 mm Length 15.87 mm
Product Type IGBT Transistors Factory Pack Quantity 450
Subcategory IGBTs Width 4.82 mm
Part # Aliases HGTG20N60A4D_NL

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • HGTG20N60A4D is a power semiconductor chip designed for high-voltage applications. It is a Insulated Gate Bipolar Transistor (IGBT) that can handle up to 600V and 40A of current. This chip is commonly used in power electronics circuits to efficiently switch and control high-power loads such as motors, inverters, and power supplies.
  • Equivalent

    Some equivalent products of the HGTG20N60A4D chip are the IRG4PC50UD and the IRGPC50UD.
  • Features

    The HGTG20N60A4D is a high power IGBT (Insulated Gate Bipolar Transistor) module. It features a voltage rating of 600V, a current rating of 20A, and a low switching loss for efficient operation. It has a compact design, high reliability, and is suitable for use in various power electronics applications.
  • Pinout

    The HGTG20N60A4D is a 20-pin IGBT (Insulated Gate Bipolar Transistor) module used for power electronics applications. It is designed for high voltage and high current switching applications, offering low power loss and high reliability. The pin count and specific functions of each pin can be found in the datasheet provided by the manufacturer.
  • Manufacturer

    The manufacturer of the HGTG20N60A4D is Infineon Technologies AG. It is a multinational semiconductor and system solutions company.
  • Application Field

    The HGTG20N60A4D is a high voltage IGBT (Insulated Gate Bipolar Transistor) commonly used in power electronics applications. It finds broad application in motor drives, DC-DC converters, UPS systems, welding equipment, and other high power systems requiring efficient switching capabilities and high voltage handling.
  • Package

    The HGTG20N60A4D chip is in a TO-247 package type, with a through-hole mounting form. It has a size of approximately 15.75mm (length) x 5.21mm (width) x 20.57mm (height).

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

Ratings and Reviews

Ratings
Please rate the product !
Please enter a comment

Please submit comments after logging into your account.

Submit

Recommend

  • MJE5731AG

    MJE5731AG

    Onsemi

    The MJE5731AG is a PNP transistor suitable for gen...

  • MJF18008G

    MJF18008G

    Onsemi

    8A 450V 45W NPN Bipolar Transistors

  • MJ15004G

    MJ15004G

    Onsemi

    The MJ15003 and MJ15004 serve as power transistors...

  • MJ21195G

    MJ21195G

    Onsemi

    ROHS compliant TO-204AA transistors with 250V volt...

  • MJ21196G

    MJ21196G

    Onsemi

    Bipolar NPN Transistor, 250V, 16A

  • PD55015-E

    PD55015-E

    STMicroelectronics, Inc

    RF Mosfet 12.5 V 150 mA 500MHz 14dB 15W PowerSO-10...