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HGTG30N60A4D
600V, SMPS IGBT
Brands: Onsemi
Mfr.Part #: HGTG30N60A4D
Datasheet: HGTG30N60A4D Datasheet (PDF)
Package/Case: TO-247-3
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Product Type: Single IGBTs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $7.287 | $7.287 |
| 10 | $6.438 | $64.380 |
| 30 | $5.921 | $177.630 |
| 90 | $5.212 | $469.080 |
In Stock: 9,458 PCS
HGTG30N60A4D General Description
The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345.
Features
- 100kHz Operation at 390V, 30A
- 200kHz Operation at 390V, 18A
- 600V Switching SOA Capability
- Typical Fall Time. . . . . . . . . . 60ns at TJ = 125&°C
- Low Conduction Loss
- Temperature Compensating SABER™Model
Application
- AC-DC Merchant Power Supply - Servers & Workstations
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | IGBT Transistors | RoHS | Details |
| REACH | Details | Technology | Si |
| Package / Case | TO-247-3 | Mounting Style | Through Hole |
| Configuration | Single | Collector- Emitter Voltage VCEO Max | 600 V |
| Collector-Emitter Saturation Voltage | 1.8 V | Maximum Gate Emitter Voltage | - 20 V, 20 V |
| Continuous Collector Current at 25 C | 70 A | Pd - Power Dissipation | 463 W |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Series | HGTG30N60A4D | Brand | onsemi / Fairchild |
| Continuous Collector Current | 75 A | Continuous Collector Current Ic Max | 75 A |
| Gate-Emitter Leakage Current | +/- 250 nA | Height | 20.82 mm |
| Length | 15.87 mm | Product Type | IGBT Transistors |
| Factory Pack Quantity | 450 | Subcategory | IGBTs |
| Width | 4.82 mm | Part # Aliases | HGTG30N60A4D_NL |
| Unit Weight | 0.225401 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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HGTG30N60A4D is a chip that belongs to the IGBT (Insulated Gate Bipolar Transistor) family. It is specifically designed for high-voltage applications and offers low conduction and switching losses. HGTG30N60A4D chip enables efficient power conversion in various electronic devices, including inverters, motor drives, and power supplies. It provides reliable performance with excellent thermal characteristics, making it suitable for demanding applications.
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Equivalent
Some equivalent products of the HGTG30N60A4D chip include the IRGPS60B120KDPbF, IGBT30N60A4H, and the HGTP30N60AFD. These chips provide similar functionality and can be used as substitutes for the HGTG30N60A4D in various applications. -
Features
The HGTG30N60A4D is a high voltage IGBT designed for use in switching applications. It has a current rating of 30A, a voltage rating of 600V, and a low saturation voltage. It offers low on-state losses, fast switching speeds, and is suitable for high frequency operation. It also includes built-in thermal protection and is housed in a TO-247 package. -
Pinout
The HGTG30N60A4D is a 30A IGBT power module. It has 7 pins with the following functions: 1. G: Gate control 2. G: Gate control 3. C: Collector of the IGBT 4. E: Emitter of the IGBT 5. F: Collector of the free-wheeling diode 6. F: Collector of the free-wheeling diode 7. E: Emitter of the free-wheeling diode -
Manufacturer
The manufacturer of the HGTG30N60A4D is Infineon Technologies AG. It is a German semiconductor company that produces a wide range of products, including power semiconductors, microcontrollers, sensors, and automotive electronics. -
Application Field
The HGTG30N60A4D is a high voltage transistor commonly used in various power applications such as motor control, power supplies, and inverters. Its robust design and ability to handle high voltage and current make it suitable for demanding industrial and automotive applications. -
Package
The HGTG30N60A4D chip is available in a TO-247 package type, with a transistor form. As for the size, it follows the industry standard TO-247 dimensions, which measure approximately 26.16mm x 15.9mm x 5.5mm.
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