HGTP10N120BN
HGTP10N120BN is an IGBT NPT with a voltage rating of 1200 V and a current rating of 35 A in a Through Hole TO-220-3 package
Brands: Onsemi
Mfr.Part #: HGTP10N120BN
Datasheet: HGTP10N120BN Datasheet (PDF)
Package/Case: TO-220-3
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: IGBT Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $6.353 | $6.353 |
10 | $5.695 | $56.950 |
30 | $5.294 | $158.820 |
100 | $4.957 | $495.700 |
In Stock:9458 PCS
HGTP10N120BN General Description
HGTP10N120BN is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
Features
- 17A, 1200V, TC = 110°C
- Low saturation voltage: VCE(sat) = 2.45V @ IC = 10A
- Typical Fall Time. . . . . . . . . .140ns at TJ= 150°C
- Short Circuit Rating
- Low Conduction Loss
Application
- Uninterruptible Power Supply
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-220-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.45 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 35 A |
Pd - Power Dissipation | 298 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | HGTP10N120BN |
Brand | onsemi / Fairchild | Continuous Collector Current | 35 A |
Continuous Collector Current Ic Max | 35 A | Gate-Emitter Leakage Current | +/- 250 nA |
Height | 9.4 mm | Length | 10.67 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 800 |
Subcategory | IGBTs | Width | 4.83 mm |
Part # Aliases | HGTP10N120BN_NL |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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HGTP10N120BN is a power transistor chip designed for high voltage applications. It features a maximum drain current of 10A, a breakdown voltage of 1200V, and a low on-resistance. The chip is capable of handling high power levels, making it suitable for use in industries like automotive, industrial, and consumer electronics. Its compact size and efficient design make it an attractive choice for power management circuits.
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Equivalent
Some equivalent products for the HGTP10N120BN chip include STGW39MH120D, IXYS IXDF10N120P, and ON Semiconductor NGTB10N120FL2WG. These devices have similar specifications and can be used as replacements or alternatives in various applications. -
Features
The HGTP10N120BN is a MOSFET transistor that has a voltage rating of 1,200V, a current rating of 10A, and a power rating of 460W. It has low on-resistance, fast switching speed, and low gate charge. It is designed for high-frequency switching applications in power supplies, inverters, and motor control systems. -
Pinout
The HGTP10N120BN is a power MOSFET with a TO-220 packaging. It has 3 pins: gate (G), drain (D), and source (S). The gate terminal controls the flow of current between the drain and source pins. -
Manufacturer
The manufacturer of the HGTP10N120BN is Vishay Semiconductors. Vishay is a global company that specializes in manufacturing discrete semiconductors and passive electronic components. They provide a wide range of products for various industries, including automotive, telecommunications, industrial, and consumer electronics. -
Application Field
The HGTP10N120BN is a high voltage, N-channel IGBT designed for switching applications in motor drive systems, inverters, and welding equipment. It offers low conduction and switching losses, high efficiency, and high ruggedness, making it suitable for high power applications in various industries including automotive, industrial automation, and renewable energy. -
Package
The HGTP10N120BN chip is packaged in a TO-220AB form and has a size of approximately 10.16 x 4.57 x 9.14 mm.
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