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NEXPERIA 2N7002NXAKR
N-Channel 60 V 190mA (Ta), 300mA (Tc) 265mW (Ta), 1.33W (Tc) Surface Mount TO-236AB
Brands: Nexperia
Mfr.Part #: 2N7002NXAKR
Datasheet: 2N7002NXAKR Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 7585 pcs, New Original
Product Type: MOSFET
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 5 | $0.032 | $0.160 |
| 50 | $0.026 | $1.300 |
| 150 | $0.022 | $3.300 |
| 500 | $0.020 | $10.000 |
| 3000 | $0.017 | $51.000 |
| 6000 | $0.016 | $96.000 |
In Stock:7585 PCS
2N7002NXAKR General Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
- Very fast switching
- Trench MOSFET technology
- ESD protected
Application
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 190mA (Ta), 300mA (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.5Ohm @ 100mA, 10V | Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.43 nC @ 4.5 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 20 pF @ 10 V | FET Feature | - |
| Power Dissipation (Max) | 265mW (Ta), 1.33W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | TO-236AB |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The 2N7002NXAKR is an N-channel enhancement mode MOSFET transistor designed for low voltage, high-speed switching applications. It has a maximum drain-source voltage of 60V and a continuous drain current of 310mA. This chip is commonly used in power management circuits, battery chargers, and LED lighting drivers.
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Equivalent
Some equivalent products of 2N7002NXAKR chip are Si2319DS-T1-GE3, FDC6327C, BS170, 2N7002DW-7-F, SSM3K15AMFV, and DMN61D0LDW-7-F. These are other MOSFET transistors with similar specifications and characteristics that can be used as alternatives to the 2N7002NXAKR chip. -
Features
The 2N7002NXAKR is a small signal MOSFET transistor. It features a low threshold voltage, typically around 2.1V, making it suitable for low voltage applications. With a maximum drain-source voltage of 60V and a continuous drain current of 115mA, it's commonly used in switching and amplification circuits in various electronic devices. -
Pinout
The 2N7002NXAKR is a MOSFET with a 3-pin count. Pin 1 is the source, pin 2 is the gate, and pin 3 is the drain. It is a small-signal N-channel device with a maximum drain-source voltage of 60V and a maximum continuous drain current of 115 mA. -
Manufacturer
The 2N7002NXAKR is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor supplier specializing in energy-efficient power management, signal processing, logic, discrete, and custom solutions. It provides innovative solutions for a variety of industries including automotive, industrial, consumer electronics, and communications. -
Application Field
The 2N7002NXAKR is commonly used in various electronic applications such as low-power switching, amplification, signal processing, and regulation. It is suitable for battery-operated portable devices, audio amplifiers, LED drivers, and power management circuitry. Its small size, low on-resistance, and high switching speed make it ideal for space-constrained and energy-efficient applications. -
Package
The 2N7002NXAKR chip comes in a SOT-23 package type, in a chip form, and with a size of 2.9mm x 1.3mm x 1.0mm.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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