This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

HGTG30N60A4 48HRS

IGBT, 600V, SMPS

ISO14001 ISO9001 DUNS

Brands: Onsemi

Mfr.Part #: HGTG30N60A4

Datasheet: HGTG30N60A4 Datasheet (PDF)

Package/Case: TO-247-3

RoHS Status:

Stock Condition: 9458 pcs, New Original

Product Type: IGBT Transistors

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $8.126 $8.126
10 $7.083 $70.830
30 $6.448 $193.440
100 $5.915 $591.500

In Stock:9458 PCS

- +

Quick Quote

Please submit RFQ for HGTG30N60A4 or email to us: Email: [email protected], we will contact you within 12 hours.

HGTG30N60A4 General Description

The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

Features

  • 60A, 600V @ TC = 110°C
  • Low Saturation Voltage : V CE(sat) = 1.8 V @ I C = 30A
  • Typical Fall Time. . . . . . . . . . 58ns at TJ = 125°C
  • Low Conduction Loss

Application

  • Other Industrial

Specifications

Parameter Value Parameter Value
Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.8 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 75 A
Pd - Power Dissipation 463 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series HGTG30N60A4
Brand onsemi / Fairchild Continuous Collector Current 75 A
Continuous Collector Current Ic Max 75 A Gate-Emitter Leakage Current +/- 250 nA
Height 20.82 mm Length 15.87 mm
Product Type IGBT Transistors Factory Pack Quantity 450
Subcategory IGBTs Width 4.82 mm
Part # Aliases HGTG30N60A4_NL

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The HGTG30N60A4 is a high-voltage, high-speed switching power transistor chip commonly used in applications such as motor drives, power supplies, and inverters. It has a rugged design that can withstand high temperatures and high currents, making it ideal for demanding industrial environments.
  • Equivalent

    The equivalent products of HGTG30N60A4 chip are IXGH30N60A4, IRG7PH46UD, and HGTP30N60A4. These are alternative power semiconductor devices with similar specifications and functionalities that can be used as replacements for the HGTG30N60A4 chip.
  • Features

    1. 600V, 60A IGBT transistor 2. High current capability and low saturation voltage 3. Ultrafast soft recovery antiparallel diodes 4. Designed for high frequency switching applications 5. Enhanced ruggedness and reliability 6. Suitable for motor control, UPS systems, inverters, and welding applications.
  • Pinout

    HGTG30N60A4 is a 3-pin IGBT transistor. It has a Gate (G), Collector (C), and Emitter (E) pin. The function of this transistor is to control the flow of current between the Collector and Emitter pins based on the voltage applied to the Gate pin.
  • Manufacturer

    HGTG30N60A4 is manufactured by Fairchild Semiconductor, a company known for producing power and signal management, logic, discrete, and custom semiconductor solutions. Fairchild Semiconductor is a global supplier of high performance power and mobile chips for the automotive, consumer, industrial, and mobile markets.
  • Application Field

    HGTG30N60A4 is commonly used in high-voltage applications such as power supplies, motor control, and switch-mode power supplies. It is suitable for use in inverters, welding equipment, and industrial applications where high power and efficiency are required.
  • Package

    The HGTG30N60A4 chip is in a TO-247 package type, has a standard form, and measures 10mm x 5.7mm x 3.5mm in size.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

Ratings and Reviews

Ratings
Please rate the product !
Please enter a comment

Please submit comments after logging into your account.

Submit

Recommend

  • MJE5731AG

    MJE5731AG

    Onsemi

    The MJE5731AG is a PNP transistor suitable for gen...

  • MJF18008G

    MJF18008G

    Onsemi

    8A 450V 45W NPN Bipolar Transistors

  • MJ15004G

    MJ15004G

    Onsemi

    The MJ15003 and MJ15004 serve as power transistors...

  • MJ21195G

    MJ21195G

    Onsemi

    ROHS compliant TO-204AA transistors with 250V volt...

  • MJ21196G

    MJ21196G

    Onsemi

    Bipolar NPN Transistor, 250V, 16A

  • PD55015-E

    PD55015-E

    STMicroelectronics, Inc

    RF Mosfet 12.5 V 150 mA 500MHz 14dB 15W PowerSO-10...