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SIR626DP-T1-RE3
N-Channel 60 V (D-S) MOSFET
Brands: VISHAY INTERTECHNOLOGY INC
Mfr.Part #: SIR626DP-T1-RE3
Datasheet: SIR626DP-T1-RE3 Datasheet (PDF)
Package/Case: PowerPAK® SO-8
Product Type: MOSFET
RoHS Status:
Stock Condition: 6027 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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N-Channel 60 V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
Features
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | Package Description | SMALL OUTLINE, R-PDSO-F5 |
| Reach Compliance Code | ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks, 4 Days | Date Of Intro | 2017-03-22 |
| Samacsys Manufacturer | Vishay | Avalanche Energy Rating (Eas) | 125 mJ |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 V | Drain Current-Max (Abs) (ID) | 100 A |
| Drain Current-Max (ID) | 100 A | Drain-source On Resistance-Max | 0.002 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 | Number of Terminals | 5 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 104 W | Pulsed Drain Current-Max (IDM) | 200 A |
| Surface Mount | YES | Terminal Form | FLAT |
| Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 78 ns |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SIR626DP-T1-RE3 is a high-performance RF power amplifier module designed for applications in the 0.5 to 2.5 GHz frequency range. This chip offers excellent power added efficiency and linearity, making it ideal for use in cellular infrastructure, repeaters, small cells, and other wireless communication systems. Its compact size and high reliability make it a versatile option for high-power RF applications.
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Equivalent
Some equivalent products of SIR626DP-T1-RE3 chip are SIR633DP-T1-RE3, SIR624DP-T1-RE3, and SIR625DP-T1-RE3 from the same manufacturer. These chips are all dual P-channel MOSFETs with similar specifications and features. -
Features
- SIR626DP-T1-RE3 is a high-speed, low resistance, dual P-channel MOSFET - Features a drain-source voltage of -30V - Provides a maximum continuous drain current of -7A - Designed for use in portable electronics, battery protection circuits, and load switching applications -
Pinout
The SIR626DP-T1-RE3 is a Dual P-Channel MOSFET with 8 pins. Its functions include providing high-speed switching for power management applications. -
Manufacturer
The manufacturer of SIR626DP-T1-RE3 is Vishay Semiconductor. Vishay Semiconductor is a company that specializes in the design and production of discrete semiconductors and passive electronic components. They are known for their high-quality products and innovative solutions for various industries such as automotive, industrial, consumer electronics, and telecommunications. -
Application Field
SIR626DP-T1-RE3 is commonly used in applications requiring fast switching speeds and high breakdown voltage, such as high-frequency power amplifiers, radar systems, and microwave applications. It is also suitable for use in power management systems, RF transmitters, and satellite communication systems. -
Package
The SIR626DP-T1-RE3 chip is a diode rectifier in a D-PAK package. It has a surface mount form and a size of 6.6mm x 9.2mm x 3.6mm.
We provide high quality products, thoughtful service and after sale guarantee
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products
