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SI2342DS-T1-GE3
This MOSFET, identified as SI2342DS-T1-GE3, features N-channel design, supports up to 8 volts and 6 amps, and comes in the SOT-23 package
Brands: Vishay
Mfr.Part #: SI2342DS-T1-GE3
Datasheet: SI2342DS-T1-GE3 Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 8841 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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MOSFET, N-CH, 8V, 6A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 8V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 800mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
Features
Application
Load Switches for Low Voltage Gate Drive |Low Voltage Operating Circuits - Gate Drive 1.2 V to 5 VSpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 8 V |
| Id - Continuous Drain Current | 6 A | Rds On - Drain-Source Resistance | 17 mOhms |
| Vgs - Gate-Source Voltage | - 5 V, + 5 V | Vgs th - Gate-Source Threshold Voltage | 800 mV |
| Qg - Gate Charge | 6 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay / Siliconix |
| Configuration | Single | Fall Time | 25 ns |
| Product Type | MOSFET | Rise Time | 14 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 65 ns |
| Typical Turn-On Delay Time | 6 ns | Part # Aliases | SI2342DS-T1-BE3 |
| Unit Weight | 0.000282 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI2342DS-T1-GE3 chip is an integrated circuit designed for power management applications. It features a small form factor and low on-resistance, making it suitable for use in portable electronics and battery-powered devices. The chip provides efficient voltage regulation, thermal protection, and fault detection capabilities. Its compact size and performance characteristics make it an ideal choice for compact and energy-efficient electronic designs.
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Equivalent
The equivalent products of the SI2342DS-T1-GE3 chip are the SI4835DDY-T1-GE3, SI4435DY-T1-GE3, and SI2351DS-T1-GE3 chips. -
Features
The SI2342DS-T1-GE3 is a P-channel MOSFET with a maximum voltage rating of -20V and a maximum current rating of -2.5A. It features low on-resistance and fast switching speed, making it suitable for various electronic applications. It comes in a compact, surface-mount package for easy installation. -
Pinout
The SI2342DS-T1-GE3 is a dual N-channel MOSFET with a pin count of 6. It is designed for applications requiring high-speed switching and low gate drive power. The pinout includes the gate, source, and drain pins for each of the two internal MOSFETs. -
Manufacturer
The manufacturer of the SI2342DS-T1-GE3 is Vishay Siliconix. Vishay Siliconix is a semiconductor manufacturer that specializes in producing power MOSFETs, analog switches, and integrated circuits for various applications. They are known for their high-quality and reliable semiconductor solutions. -
Application Field
The SI2342DS-T1-GE3 is a P-channel MOSFET transistor and can be used in various applications such as power management, load switching, and battery protection circuits. It is commonly used in portable electronic devices, automotive applications, and other low-voltage and low-power applications where efficient power control is required. -
Package
The SI2342DS-T1-GE3 chip comes in a SOT-23 package, which is a small surface-mount package that measures approximately 2.9 mm x 1.3 mm x 1.0 mm.
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