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SIR422DP-T1-GE3
Vishay Siliconix SIR422DP-T1-GE3 N-channel MOSFET, 40 A, 40 V, 8-Pin PowerPAK SO
Brands: Vishay Siliconix
Mfr.Part #: SIR422DP-T1-GE3
Datasheet: SIR422DP-T1-GE3 Datasheet (PDF)
Package/Case: PowerPAK®SO-8
RoHS Status:
Stock Condition: 5230 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.755 | $0.755 |
| 10 | $0.614 | $6.140 |
| 30 | $0.543 | $16.290 |
| 100 | $0.474 | $47.400 |
| 500 | $0.433 | $216.500 |
| 1000 | $0.410 | $410.000 |
In Stock:5230 PCS
SIR422DP-T1-GE3 General Description
Power Field-Effect Transistor, 20.5A I(D), 40V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Features
Application
SWITCHINGSpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Series | TrenchFET® | Product Status | Active |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V | Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 6.6mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 1785 pF @ 20 V |
| Power Dissipation (Max) | 5W (Ta), 34.7W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SIR422DP-T1-GE3 is a high-performance power MOSFET featuring low RDS(on) and high current capability. It is designed for use in various power management applications such as power supplies, motor control, and LED lighting. This MOSFET offers excellent efficiency, reliability, and thermal performance in a compact package for space-constrained designs.
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Equivalent
The equivalent products of SIR422DP-T1-GE3 chip are the SI4434DY-T1-GE3 and SI4435DY-T1-GE3 chips. -
Features
1. High-current density 2. Low package resistance and inductance 3. High thermal performance 4. Very low on-resistance 5. Low switching losses 6. Low gate charge 7. Avalanche energy rating 8. RoHS compliant. -
Pinout
SIR422DP-T1-GE3 is a dual N-channel MOSFET with a pin count of 6. Its functions include high-speed switching, low on-resistance, and a low gate charge. This device is commonly used in power management applications such as power supplies and motor control. -
Manufacturer
The manufacturer of SIR422DP-T1-GE3 is Vishay Intertechnology. Vishay Intertechnology is a global company that produces discrete semiconductors and passive electronic components. They specialize in the design, manufacturing, and distribution of a wide range of electronic components for industries such as automotive, industrial, consumer, and telecommunications. -
Application Field
SIR422DP-T1-GE3 is a power MOSFET designed for applications requiring high-efficiency power management, such as switching regulators, motor control, and power supplies. It is suitable for use in various electronic devices and systems that require high-performance power switching capabilities. -
Package
The SIR422DP-T1-GE3 chip is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) in a DPAK (TO-252) surface mount package. It has a form factor of a single discrete component. The size of the chip is approximately 6.6mm x 9.35mm x 4.6mm.
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