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ST STB33N60M2
N-Channel 600 V 26A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
Brands: STMicroelectronics, Inc
Mfr.Part #: STB33N60M2
Datasheet: STB33N60M2 Datasheet (PDF)
Package/Case: D2PAK
Product Type: Transistors
RoHS Status:
Stock Condition: 2799 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomSTB33N60M2 General Description
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Features
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | STMicroelectronics | Product Category: | MOSFET |
| RoHS: | Y | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | TO-263-3 |
| Number of Channels: | 1 Channel | Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 600 V | Id - Continuous Drain Current: | 26 A |
| Rds On - Drain-Source Resistance: | 125 mOhms | Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Vgs - Gate-Source Voltage: | 25 V | Qg - Gate Charge: | 45.5 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 190 W | Configuration: | Single |
| Channel Mode: | Enhancement | Tradename: | MDmesh |
| Packaging: | Reel | Series: | STB33N60M2 |
| Transistor Type: | 1 N-Channel | Brand: | STMicroelectronics |
| Fall Time: | 9 ns | Product Type: | MOSFET |
| Rise Time: | 9.6 ns | Factory Pack Quantity: | 1000 |
| Subcategory: | MOSFETs | Typical Turn-Off Delay Time: | 109 ns |
| Typical Turn-On Delay Time: | 16 ns | Unit Weight: | 0.139332 oz |
| Tags | STB33N60, STB33, STB3, STB | feature-packaging | Tape and Reel |
| feature-rad-hard | feature-pin-count | 3 | |
| feature-supplier-package | D2PAK | feature-standard-package-name1 | TO-263 |
| feature-cecc-qualified | No | feature-esd-protection | |
| feature-escc-qualified | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | Yes |
| feature-svhc-exceeds-threshold | Yes |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The STB33N60M2 is a power transistor chip designed for high-voltage applications. It features a low on-resistance and high current capability, making it suitable for power conversion and motor control circuits. The chip is built using advanced silicon technology, providing high reliability and efficient performance.
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Equivalent
The equivalent products of the STB33N60M2 chip include STP33N60M2, STP30N10L, and STP30NF10L. -
Features
The STB33N60M2 is a MOSFET transistor with a voltage rating of 600V and a current rating of 33A. It has low on-resistance, which allows for efficient switching in power applications. The transistor is designed for use in various types of electronic circuits, including motor drives, power supplies, and inverters. -
Pinout
The STB33N60M2 is a power MOSFET transistor with a TO-263 package. It has 3 pins: Gate (G), Drain (D), and Source (S). It is designed for high voltage applications and power switching. -
Manufacturer
The manufacturer of the STB33N60M2 is STMicroelectronics. It is a multinational semiconductor company that designs, manufactures, and markets a wide range of electronic components. -
Application Field
The STB33N60M2 is a power MOSFET that is commonly used in applications such as switch mode power supplies, motor control circuits, and battery chargers. It is designed to handle high voltage and current levels, making it suitable for various industrial and automotive applications. -
Package
The STB33N60M2 chip is available in a TO-247 package type, with a compact form and size. It is a power MOSFET device designed specifically for switch-mode power supply applications.
Datasheet PDF
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365 days quality guarantee for all products
I was disappointed with the performance of the product, but it was adequate for basic tasks.