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SI2343CDS-T1-GE3
The product SI2343CDS-T1-GE3 is a P-channel MOSFET rated for 30 volts
Brands: Vishay
Mfr.Part #: SI2343CDS-T1-GE3
Datasheet: SI2343CDS-T1-GE3 Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 5659 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.347 | $0.347 |
| 10 | $0.306 | $3.060 |
| 30 | $0.289 | $8.670 |
| 100 | $0.266 | $26.600 |
| 500 | $0.221 | $110.500 |
| 1000 | $0.214 | $214.000 |
In Stock:5659 PCS
SI2343CDS-T1-GE3 General Description
Small Signal Field-Effect Transistor, 5.9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Features
Application
Load Switch |Notebook Adaptor Switch |DC/DC ConverterSpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 5.9 A | Rds On - Drain-Source Resistance | 45 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 7 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 8 ns |
| Product Type | MOSFET | Rise Time | 10 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 18 ns |
| Typical Turn-On Delay Time | 8 ns | Part # Aliases | SI2343CDS-T1-BE3 SI2343CDS-GE3 |
| Unit Weight | 0.000282 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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SI2343CDS-T1-GE3 is a high-performance power MOSFET transistor chip designed for various applications in power management, motor control, and DC-DC converters. It features low ON resistance, fast switching speed, and high thermal efficiency. This chip is ideal for use in automotive, industrial, and consumer electronic devices.
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Equivalent
Some equivalent products of the SI2343CDS-T1-GE3 chip are SI7119DP-T1-GE3, NVB4504NT4G, ZXMN6A25F, SiP4000, AP4332, and IRFP460. -
Features
SI2343CDS-T1-GE3 is an N-channel 30V (D-S) MOSFET with low on-resistance, low gate charge, and fast switching performance. It also has a small footprint, high power dissipation capability, and high current handling capacity, making it ideal for power management applications in a variety of electronic devices. -
Pinout
SI2343CDS-T1-GE3 is a dual N/P-channel MOSFET with a total of 5 pins. Pin 1 is the source of N-channel, Pin 3 is the gate of N-channel, Pin 2 is the source of P-channel, Pin 4 is the gate of P-channel, and Pin 5 is the drain for both channels. -
Manufacturer
SI2343CDS-T1-GE3 is manufactured by Vishay Siliconix. Vishay Siliconix is a leading manufacturer of discrete semiconductors and passive electronic components. They offer a wide range of products including transistors, diodes, MOSFETs, and capacitors for various applications in the electronics industry. -
Application Field
SI2343CDS-T1-GE3 is a dual N-channel enhancement mode MOSFET with a low on-resistance and high current handling capability. It is commonly used in power management applications, such as voltage regulation, power distribution, and motor control in various electronic devices, including laptops, smartphones, and power supplies. -
Package
The SI2343CDS-T1-GE3 chip comes in a SOT-23-3 package. It is a surface mount form factor with three pins. The dimensions of the package are typically 2.9mm x 1.3mm x 1.1mm.
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