SI2333DDS-T1-GE3
ROHS-compliant P Channel SOT-23 MOSFET capable of handling currents up to 5A with a low 1V voltage drop at 250uA
Brands: Vishay
Mfr.Part #: SI2333DDS-T1-GE3
Datasheet: SI2333DDS-T1-GE3 Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 6290 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Small Signal Field-Effect Transistor, 6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Features
Application
Smart Phones and Tablet PCs - Load Switch - Battery SwitchSpecifications
Parameter | Value | Parameter | Value |
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Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 12 V |
Id - Continuous Drain Current | 6 A | Rds On - Drain-Source Resistance | 23 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 9 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.7 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 20 ns |
Height | 1.45 mm | Length | 2.9 mm |
Product Type | MOSFET | Rise Time | 24 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 45 ns |
Typical Turn-On Delay Time | 26 ns | Width | 1.6 mm |
Part # Aliases | SI2333DDS-T1-BE3 |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI2333DDS-T1-GE3 is a low voltage, N-channel MOSFET transistor designed for use in power management and battery protection applications. It has a compact SOT-23 package and a voltage rating of 20V, making it suitable for portable electronic devices and other low voltage applications. This chip is widely used for efficient power switching and regulation in compact designs.
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Equivalent
The equivalent products of SI2333DDS-T1-GE3 chip are SI2333DDS-T1-GE3C (with different packaging) and SI2333DDS-T1-E3 (with similar specifications). -
Features
The SI2333DDS-T1-GE3 is a N-channel MOSFET with a low on-resistance of 22 mohms, a 20V drain-source voltage rating, and a 19A continuous drain current rating. It is designed for use in power management applications and offers high efficiency and low power dissipation. -
Pinout
SI2333DDS-T1-GE3 is a Dual P-Channel MOSFET with a pin count of 8. Pins 1 and 8 are the Source pins, pins 2 and 7 are Gate pins, and pins 3, 4, 5, and 6 are the Drain pins. It is commonly used for power management applications. -
Manufacturer
SI2333DDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc., an American company that specializes in manufacturing discrete semiconductors, passive components, sensors, and integrated circuits. Founded in 1962, Vishay is one of the world's largest manufacturers of discrete semiconductors and passive electronic components. -
Application Field
SI2333DDS-T1-GE3 is a dual N-channel MOSFET transistor commonly used in power management applications, battery protection circuits, DC-DC converters, and load switches. It is also used in portable electronic devices, such as smartphones, tablets, and laptops, as well as in industrial and automotive applications. -
Package
The SI2333DDS-T1-GE3 is a Surface Mount MOSFET package with an SC-70 form factor. It measures 2mm x 2mm in size.
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