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ON FDB070AN06A0
N-Channel 60 V 15A (Ta), 80A (Tc) 175W (Tc) Surface Mount D²PAK (TO-263)
Brands: ON Semiconductor, LLC
Mfr.Part #: FDB070AN06A0
Datasheet: FDB070AN06A0 Datasheet (PDF)
Package/Case: TO-263
Product Type: Transistors
FDB070AN06A0 General Description
N-Channel PowerTrench® MOSFET 60V, 80A, 7mΩ, The latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.
Features
- RDS(on) = 6.1mΩ (Typ.) @ VGS = 10V, ID = 80A
- QG(tot) = 51nC (Typ.) @ VGS = 10V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
Application
- AC-DC Merchant Power Supply
- AC-DC Merchant Power Supply - Desktop PC
- AC-DC Merchant Power Supply - Servers & Workstations
- Other Data Processing
- Other Industrial
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | onsemi | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | SC-70-3 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V | Id - Continuous Drain Current: | 80 A |
| Rds On - Drain-Source Resistance: | 6.1 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V | Qg - Gate Charge: | 66 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 175 W | Channel Mode: | Enhancement |
| Tradename: | PowerTrench | Series: | FDB070AN06A0 |
| Packaging: | MouseReel | Brand: | onsemi / Fairchild |
| Configuration: | Single | Fall Time: | 35 ns |
| Height: | 4.83 mm | Length: | 10.67 mm |
| Product Type: | MOSFET | Rise Time: | 159 ns |
| Factory Pack Quantity: | 800 | Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel | Type: | MOSFET |
| Typical Turn-Off Delay Time: | 27 ns | Typical Turn-On Delay Time: | 12 ns |
| Width: | 9.65 mm | Part # Aliases: | FDB070AN06A0_NL |
| Unit Weight: | 0.139332 oz | feature-category | Power MOSFET |
| feature-material | feature-process-technology | TMOS | |
| feature-configuration | Single | feature-channel-mode | Enhancement |
| feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
| feature-maximum-drain-source-voltage-v | 60 | feature-maximum-gate-source-voltage-v | ±20 |
| feature-maximum-gate-threshold-voltage-v | 4 | feature-maximum-continuous-drain-current-a | 15 |
| feature-maximum-drain-source-resistance-mohm | 7@10V | feature-typical-gate-charge-vgs-nc | 51@10V |
| feature-typical-gate-charge-10v-nc | 51 | feature-typical-input-capacitance-vds-pf | 3000@25V |
| feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 175000 | |
| feature-packaging | Tape and Reel | feature-rad-hard | |
| feature-pin-count | 3 | feature-supplier-package | D2PAK |
| feature-standard-package-name1 | TO-263 | feature-cecc-qualified | No |
| feature-esd-protection | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | Yes |
| feature-svhc-exceeds-threshold | Yes |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDB070AN06A0 chip, manufactured by Fairchild Semiconductor, is a power MOSFET transistor designed specifically for use in automotive applications. It features a drain-source voltage rating of 60V and a continuous drain current capability of 70A. The chip also incorporates advanced trench technology, providing low on-state resistance and high switching performance.
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Features
The FDB070AN06A0 is a power MOSFET module that features a low on-resistance of 7.4mΩ, allowing for efficient power management and reduced power dissipation. It also has a high current rating of 70A, making it suitable for a variety of applications requiring high power handling. -
Pinout
The FDB070AN06A0 is a power MOSFET transistor with a pin count of 3. The functions of its three pins are typically Gate, Drain, and Source. -
Manufacturer
The manufacturer of the FDB070AN06A0 is Infineon Technologies. It is a German multinational semiconductor company that specializes in the manufacturing and distribution of various semiconductor products, including power management ICs, microcontrollers, sensors, and automotive electronics, among others. -
Application Field
The FDB070AN06A0 is a power MOSFET transistor designed for use in high-speed, high-frequency applications such as switch-mode power supplies, motor control, and lighting controllers. It can also be used in audio amplifiers and other high-performance electronic devices due to its low on-resistance and high voltage capability. -
Package
The FDB070AN06A0 chip is a power MOSFET device with a TO-263 package type, which is also known as D2PAK or I2PAK. It has a form of a rectangular plastic package with three leads and a size of approximately 10.3mm x 9.6mm x 4mm.
Datasheet PDF
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