Images are for reference only See Product Specifications
ON NTLJD3115PT1G
Mosfet Array 20V 2.3A 710mW Surface Mount 6-WDFN (2x2)
Brands: ON Semiconductor, LLC
Mfr.Part #: NTLJD3115PT1G
Datasheet: NTLJD3115PT1G Datasheet (PDF)
Package/Case: WDFN EP
Product Type: Transistors
NTLJD3115PT1G General Description
Mosfet Array 20V 2.3A 710mW Surface Mount 6-WDFN (2x2)
Features
- WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction
- 2x2 mm Footprint Same as SC-88
- Lowest RDS(on) Solution in 2x2 mm Package
- 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level
- Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
- Bidirectional Current Flow with Common Source Configuration
Application
- Optimized for Battery and Load Management Applications in Portable Equipment
- Li-Ion Battery Charging and Protection Circuits
- High Side Load Switch
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Source Content uid | NTLJD3115PT1G | Pbfree Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
| Part Package Code | WDFN6 2x2, 0.65P | Package Description | WDFN-6 |
| Pin Count | 6 | Manufacturer Package Code | 506AN |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Factory Lead Time | 22 Weeks | Samacsys Manufacturer | onsemi |
| Additional Feature | LOGIC LEVEL COMPATIBLE | Case Connection | DRAIN |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 20 V |
| Drain Current-Max (ID) | 2.3 A | Drain-source On Resistance-Max | 0.135 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | S-PDSO-N6 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 6 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 1.5 W | Pulsed Drain Current-Max (IDM) | 20 A |
| Qualification Status | Not Qualified | Surface Mount | YES |
| Terminal Finish | MATTE TIN | Terminal Form | NO LEAD |
| Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
| feature-category | Power MOSFET | feature-material | |
| feature-process-technology | feature-configuration | Dual | |
| feature-channel-mode | Enhancement | feature-channel-type | P |
| feature-number-of-elements-per-chip | 2 | feature-maximum-drain-source-voltage-v | 20 |
| feature-maximum-gate-source-voltage-v | ±8 | feature-maximum-gate-threshold-voltage-v | 1 |
| feature-maximum-continuous-drain-current-a | 3.3 | feature-maximum-drain-source-resistance-mohm | [email protected] |
| feature-typical-gate-charge-vgs-nc | [email protected] | feature-typical-gate-charge-10v-nc | 5.5 |
| feature-typical-input-capacitance-vds-pf | 531@10V | feature-typical-output-capacitance-pf | 91 |
| feature-maximum-power-dissipation-mw | 2300 | feature-packaging | Tape and Reel |
| feature-rad-hard | feature-pin-count | 6 | |
| feature-supplier-package | WDFN EP | feature-standard-package-name1 | DFN |
| feature-cecc-qualified | No | feature-esd-protection | |
| feature-military | No | feature-aec-qualified | No |
| feature-aec-qualified-number | feature-auto-motive | No | |
| feature-p-pap | No | feature-eccn-code | EAR99 |
| feature-svhc | No |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
-
Step1 :Product
-
Step2 :Vacuum packaging
-
Step3 :Anti-static bag
-
Step4 :Individual packaging
-
Step5 :Packaging boxes
-
Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
-
The NTLJD3115PT1G chip is a high-speed, low voltage dual N-channel MOSFET designed for applications such as load and motor control. It has a compact 2mm x 2mm package and features low on-resistance with fast switching capabilities. This chip is suitable for use in a variety of electronic devices that require efficient power management and control.
-
Features
The NTLJD3115PT1G is a high-performance N-channel MOSFET transistor. It has a low on-resistance, high power dissipation capability, and is designed for applications requiring high efficiency power conversion. The device offers low gate charge which enables faster switching, making it suitable for various applications including power supplies, motor controls, and automotive systems. -
Pinout
The NTLJD3115PT1G is a MOSFET transistor with a 6-pin DFN package. It is a dual N-Channel enhancement mode transistor designed for low voltage, high-speed switching applications. The pin count includes 3 pins per channel: drain, source, and gate for each N-Channel. -
Manufacturer
The manufacturer of the NTLJD3115PT1G is ON Semiconductor. It is a semiconductor manufacturing company that specializes in designing and producing a wide range of integrated circuits, power management solutions, and discrete components for various industries including automotive, communications, consumer electronics, and industrial applications. -
Application Field
The NTLJD3115PT1G is a low on-resistance single-channel logic level N-channel MOSFET. It can be used in a variety of applications, including power management, load switching, battery charging, and motor control. Its compact package and high efficiency make it suitable for portable electronics, automotive systems, industrial equipment, and more. -
Package
The NTLJD3115PT1G chip is available in a surface mount package type known as SOT-563. It is a small form factor package with dimensions measuring approximately 1.6mm x 1.6mm x 0.6mm.
Datasheet PDF
We provide high quality products, thoughtful service and after sale guarantee
-
We have rich products, can meet your various needs.
-
Minimum order quantity starts from 1pcs.
-
Lowest international shipping fee starts from $0.00
-
365 days quality guarantee for all products
Shipping was prompt and efficient.