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ON NTD20N03L27T4G

MOSFET 30V 20A N-Channel

ISO14001 ISO9001 DUNS

Brands: ON Semiconductor, LLC

Mfr.Part #: NTD20N03L27T4G

Datasheet: NTD20N03L27T4G Datasheet (PDF)

Package/Case: DPAK

Product Type: Transistors

RoHS Status:

Stock Condition: 2207 pcs, New Original

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Quick Quote

Please submit RFQ for NTD20N03L27T4G or email to us: Email: [email protected], we will contact you within 12 hours.

NTD20N03L27T4G General Description

This logic level vertical power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery.

ntd20n03l27t4g

Features

  • Ultra-Low RDS(on) , Single Base, Advanced Technology
  • SPICE Parameters Available
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature
  • High Avalanche Energy Specified
  • ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
  • RoHS Compliant

Application

  • Power Supplies
  • Inductive Loads
  • PWM Motor Controls
  • Replaces MTD20N03L in many applications

Specifications

Parameter Value Parameter Value
Status Active CAD Models
Compliance PbAHP Package Type DPAK-3
Case Outline 369C MSL Type 1
MSL Temp (°C) 260 Container Type REEL
Container Qty. 2500 ON Target Y
Channel Polarity N-Channel Configuration Single
V(BR)DSS Min (V) 30 VGS Max (V) 20
VGS(th) Max (V) 2 ID Max (A) 20
PD Max (W) 55.5 RDS(on) Max @ VGS = 2.5 V (mΩ) -
RDS(on) Max @ VGS = 4.5 V (mΩ) 29 RDS(on) Max @ VGS = 10 V (mΩ) -
Qg Typ @ VGS = 4.5 V (nC) - Qg Typ @ VGS = 10 V (nC) 13.8
Ciss Typ (pF) 1005 Pricing ($/Unit) $0.6133Sample
Pin Count 4 Package Category TO-XXX (Inc. DPAK)
Released Date Jan 25, 2016

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The NTD20N03L27T4G is a power MOSFET chip designed for high voltage switching applications. It features a low on-resistance and low gate charge, making it efficient and suitable for various power supply and motor control applications. The chip offers a 200V drain-source voltage rating and a continuous drain current capability of 20A, making it suitable for a wide range of electronic devices.
  • Equivalent

    There are several equivalent products of the NTD20N03L27T4G chip, including the IRF1010E, IRF1018E, and IRF1405. These chips have similar specifications and can be used as alternatives in various applications.
  • Features

    The key features of NTD20N03L27T4G include a drain-to-source voltage (VDS) rating of 30 volts, a continuous drain current (ID) of 20 amperes, a low on-resistance (RDS(ON)) of 27 milliohms, and a compact, surface-mountable DPAK package.
  • Pinout

    The NTD20N03L27T4G is a power MOSFET with a pin count of 3. The pins are typically used for the gate, drain, and source connections. These MOSFETs are commonly used in applications that require switching or amplification of high-power signals.
  • Manufacturer

    The manufacturer of the NTD20N03L27T4G is ON Semiconductor. It is a multinational semiconductor company known for designing, manufacturing, and marketing a wide range of semiconductor products, including power management, analog, and discrete devices.
  • Application Field

    The NTD20N03L27T4G is a power MOSFET with a maximum drain current of 20A and a breakdown voltage of 30V. It can be used in various applications such as power supplies, motor control, DC-DC converters, and solid-state relays.
  • Package

    The NTD20N03L27T4G chip is available in a DPAK package type. Its form is a surface mount and it has a size of 6.45mm x 6.45mm x 1.6mm.

Datasheet PDF

Preliminary Specification NTD20N03L27T4G PDF Download

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