ON NTH4L020N120SC1
N-Channel 1200 V 102A (Tc) 510W (Tc) Through Hole TO-247-4L
Brands: ON Semiconductor, LLC
Mfr.Part #: NTH4L020N120SC1
Datasheet: NTH4L020N120SC1 Datasheet (PDF)
Package/Case: TO-247
Product Type: Transistors
NTH4L020N120SC1 General Description
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features
- Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A
- High Speed Switching and Low Capacitance
- 100% UIL Tested
- 1200V Rated
Application
- PFC
- Boost Inverter
- Motor Drives
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Manufacturer: | onsemi | Product Category: | MOSFET |
RoHS: | Details | Technology: | SiC |
Mounting Style: | Through Hole | Package / Case: | TO-247-4 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 1.2 kV | Id - Continuous Drain Current: | 102 A |
Rds On - Drain-Source Resistance: | 28 mOhms | Vgs - Gate-Source Voltage: | - 15 V, + 25 V |
Vgs th - Gate-Source Threshold Voltage: | 4.3 V | Qg - Gate Charge: | 220 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 510 W | Channel Mode: | Enhancement |
Packaging: | Tube | Brand: | onsemi |
Moisture Sensitive: | Yes | Product Type: | MOSFET |
Factory Pack Quantity: | 30 | Subcategory: | MOSFETs |
Unit Weight: | 0.551987 oz | feature-category | Power MOSFET |
feature-material | SiC | feature-process-technology | |
feature-configuration | Single Dual Source | feature-channel-mode | Enhancement |
feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
feature-maximum-drain-source-voltage-v | 1200 | feature-maximum-gate-source-voltage-v | 25 |
feature-maximum-gate-threshold-voltage-v | 4.3 | feature-maximum-continuous-drain-current-a | 102 |
feature-maximum-drain-source-resistance-mohm | 28@20V | feature-typical-gate-charge-vgs-nc | 220@20V |
feature-typical-gate-charge-10v-nc | feature-typical-input-capacitance-vds-pf | 2943@800V | |
feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 510000 | |
feature-packaging | Tube | feature-rad-hard | |
feature-pin-count | 4 | feature-supplier-package | TO-247 |
feature-standard-package-name1 | TO | feature-cecc-qualified | |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | Yes |
feature-svhc-exceeds-threshold | Yes |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The NTH4L020N120SC1 chip is a semiconductor device used for power management applications. It is designed to efficiently control and regulate power flow in electronic devices. The chip features low power consumption, high switching frequency, and thermal protection capabilities. It is commonly used in various industries, including consumer electronics, automotive, aerospace, and telecommunications.
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Equivalent
The equivalent products of the NTH4L020N120SC1 chip are the BSC093N12NS3 and IPP042N12N3G chips. -
Features
The NTH4L020N120SC1 is a power MOSFET transistor. It has a maximum drain-source voltage rating of 120V, a maximum continuous drain current of 20A, and a low on-resistance of 0.012 ohms. It is designed for high efficiency and performance in various electronic applications. -
Pinout
The NTH4L020N120SC1 is a MOSFET power transistor with 1200V and 20A ratings. It has a TO-247AD package, which typically consists of 3 pins: gate, drain, and source. The specific pin configuration and function may vary depending on the manufacturer. -
Application Field
The NTH4L020N120SC1 is a silicon carbide MOSFET in a discrete package. It is designed for use in various applications including motor control, power supplies, renewable energy systems, industrial equipment, and electric vehicle charging systems. -
Package
The NTH4L020N120SC1 chip is in a surface-mount package with an LQFP32 form. The size of the chip is 7mm x 7mm.
Datasheet PDF
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