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K4T1G084QF-BCE7
DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60
Brands: SAMSUNG SEMICONDUCTOR INC
Mfr.Part #: K4T1G084QF-BCE7
Datasheet: K4T1G084QF-BCE7 Datasheet (PDF)
Package/Case: BGA-60
Product Type: DRAMs
RoHS Status:
Stock Condition: 6554 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Features
- JEDEC standard VDD = 1.8V ± 0.1V Power Supply
- VDDQ = 1.8V ± 0.1V
- 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
- 8 Banks
- Posted CAS
- Programmable CAS Latency: 3, 4, 5, 6
- Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5
- Write Latency(WL) = Read Latency(RL) -1
- Burst Length: 4 , 8(Interleave/nibble sequential)
- Programmable Sequential / Interleave Burst Mode
- Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
- Off-Chip Driver(OCD) Impedance Adjustment
- On Die Termination
- Special Function Support
- - 50ohm ODT
- - High Temperature Self-Refresh rate enable
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C
- All of products are Lead-Free, Halogen-Free, and RoHS compliant
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Rohs Code | Yes | Part Life Cycle Code | Obsolete |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | Package Description | FBGA, BGA60,9X11,32 |
| Reach Compliance Code | ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | Access Time-Max | 0.4 ns |
| Clock Frequency-Max (fCLK) | 400 MHz | I/O Type | COMMON |
| Interleaved Burst Length | 4,8 | JESD-30 Code | R-PBGA-B60 |
| Memory Density | 1073741824 bit | Memory IC Type | DDR2 DRAM |
| Memory Width | 8 | Moisture Sensitivity Level | 3 |
| Number of Terminals | 60 | Number of Words | 134217728 words |
| Number of Words Code | 128000000 | Organization | 128MX8 |
| Output Characteristics | 3-STATE | Package Body Material | PLASTIC/EPOXY |
| Package Code | FBGA | Package Equivalence Code | BGA60,9X11,32 |
| Package Shape | RECTANGULAR | Package Style | GRID ARRAY, FINE PITCH |
| Peak Reflow Temperature (Cel) | 260 | Power Supplies | 1.8 V |
| Qualification Status | Not Qualified | Refresh Cycles | 8192 |
| Sequential Burst Length | 4,8 | Supply Current-Max | 0.16 mA |
| Supply Voltage-Nom (Vsup) | 1.8 V | Surface Mount | YES |
| Technology | CMOS | Terminal Form | BALL |
| Terminal Pitch | 0.8 mm |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The K4T1G084QF-BCE7 chip is a type of Synchronous Dynamic Random Access Memory (SDRAM) that offers a capacity of 1GB in an FBGA (Fine-pitch Ball Grid Array) form factor. It operates at a speed of 400 MHz and offers a low-voltage operation of 1.8V. With its high speed and large memory capacity, this chip is widely used in various electronic devices and systems.
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Features
K4T1G084QF-BCE7 is a 1Gb DDR2 SDRAM module, operating at 800 MHz. It has a 64-bit I/O interface, with a CAS latency of 6. The module operates at 1.8V, delivering high-speed data transfer rates and low power consumption for various computing applications. -
Pinout
The K4T1G084QF-BCE7 is a 1Gb DDR3 SDRAM module. It has a 78-ball FBGA (Fine-Pitch Ball Grid Array) package and a 1.8V power supply. The pin count of this module is 78. -
Manufacturer
Samsung is the manufacturer of the K4T1G084QF-BCE7. Samsung is a multinational conglomerate company based in South Korea. It is known for manufacturing a wide range of electronic products, including smartphones, televisions, and memory chips like the K4T1G084QF-BCE7. -
Application Field
The K4T1G084QF-BCE7 is a 1Gbit LPDDR3 SDRAM chip commonly used in mobile devices, such as smartphones and tablets. It can also be found in other applications requiring high-speed memory, low power consumption, and small form factor, like wearable devices, automotive infotainment systems, and IoT devices. -
Package
The K4T1G084QF-BCE7 chip has a package type of FBGA (Fine pitch Ball Grid Array). It has a form factor of 78-ball. The chip has a size of 8 gigabits.
We provide high quality products, thoughtful service and after sale guarantee
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Minimum order quantity starts from 1pcs.
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