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K4T51163QJ-BCE7
K4T51163QJ-BCE7 SAMSUNG
Brands: SAMSUNG
Mfr.Part #: K4T51163QJ-BCE7
Datasheet: K4T51163QJ-BCE7 Datasheet (PDF)
Package/Case: FBGA
Product Type: DRAMs
RoHS Status:
Stock Condition: 6554 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomK4T51163QJ-BCE7 General Description
32M X 16 DDR DRAM, 0.4 ns, PBGA84
Features
JEDEC standard 1.8V0.1V Power Supply
VDDQ = 1.8V0.1V
200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
4 Banks
Posted CAS
Programmable CAS Latency: 3, 4, 5, 6
Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5
Write Latency(WL) = Read Latency(RL) -1
Burst Length: 4 , 8(Interleave/nibble sequential)
Programmable Sequential / Interleave Burst Mode
Bi-directional Differential Data-Strobe (Single-ended data strobe is an optional feature)
Off-Chip Driver(OCD) Impedance Adjustment
On Die Termination
Special Function Support
-PASR(Partial Array Self Refresh)
-50ohm ODT
-High Temperature Self-Refresh rate enable
Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < T CASE < 95 C
All of Lead-free products are compliant for RoHS
Application
The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| EU RoHS | Compliant | ECCN (US) | EAR99 |
| Part Status | Active | HTS | 8541.29.00.95 |
| Automotive | No | PPAP | No |
| Category | Power MOSFET | Configuration | Single |
| Channel Mode | Enhancement | Channel Type | P |
| Number of Elements per Chip | 1 | Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Voltage (V) | ±20 | Maximum Gate Threshold Voltage (V) | 3 |
| Operating Junction Temperature (°C) | -55 to 150 | Maximum Continuous Drain Current (A) | 9 |
| Maximum Gate Source Leakage Current (nA) | 100 | Maximum IDSS (uA) | 1 |
| Maximum Drain Source Resistance (mOhm) | 240@10V | Typical Gate Charge @ Vgs (nC) | 17.5@10V|[email protected] |
| Typical Gate Charge @ 10V (nC) | 17.5 | Typical Gate to Drain Charge (nC) | 3.2 |
| Typical Gate to Source Charge (nC) | 2.8 | Typical Reverse Recovery Charge (nC) | 24.5 |
| Typical Input Capacitance @ Vds (pF) | 1239@25V | Typical Reverse Transfer Capacitance @ Vds (pF) | 28@25V |
| Minimum Gate Threshold Voltage (V) | 1 | Typical Output Capacitance (pF) | 42 |
| Maximum Power Dissipation (mW) | 42000 | Typical Fall Time (ns) | 34.4 |
| Typical Rise Time (ns) | 14.9 | Typical Turn-Off Delay Time (ns) | 57.4 |
| Typical Turn-On Delay Time (ns) | 9.1 | Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 | Supplier Temperature Grade | Automotive |
| Packaging | Tape and Reel | Maximum Power Dissipation on PCB @ TC=25°C (W) | 42 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 15 | Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 44 |
| Typical Diode Forward Voltage (V) | 0.7 | Typical Gate Plateau Voltage (V) | 3.1 |
| Typical Reverse Recovery Time (ns) | 25.2 | Maximum Diode Forward Voltage (V) | 1.2 |
| Maximum Positive Gate Source Voltage (V) | 20 | Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 9 |
| Mounting | Surface Mount | Package Height | 2.29 |
| Package Width | 6.1 | Package Length | 6.58 |
| PCB changed | 2 | Tab | Tab |
| Standard Package Name | TO-252 | Supplier Package | DPAK |
| Pin Count | 3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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Step4 :Individual packaging
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The K4T51163QJ-BCE7 chip is a high-performance dynamic random-access memory (DRAM) chip. It is designed to provide fast and efficient data storage and retrieval in various electronic devices such as computers, servers, and mobile devices. Its advanced technology and capacity make it suitable for demanding applications that require high-speed and reliable memory performance.
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Equivalent
The equivalent products of the K4T51163QJ-BCE7 chip are the MT41K512M8RH-107:E, MT41K512M16HA-107:E, and MT41K512M16HA-125:E chips. -
Features
The key features of K4T51163QJ-BCE7 include its capacity of 4GB, DDR3L SDRAM technology, operating voltage range of 1.35V, and a clock frequency of 1600MHz. It is a low-voltage, high-speed memory module suitable for various applications, such as laptops, desktops, and embedded systems. -
Pinout
The K4T51163QJ-BCE7 is a DDR3L SDRAM with a pin count of 96. It is commonly used in computer memory modules and offers a capacity of 8 gigabits (1 gigabyte). It operates at a voltage of 1.35V, making it suitable for low-power applications. -
Manufacturer
Samsung is the manufacturer of the K4T51163QJ-BCE7. It is a multinational conglomerate company, specializing in various sectors such as electronics, shipbuilding, construction, and more. -
Application Field
The K4T51163QJ-BCE7 is a dynamic random-access memory (DRAM) chip commonly used in various applications, including computers, servers, laptops, and gaming consoles. It provides high-speed data storage and retrieval for these devices, thereby enhancing their performance and overall functionality. -
Package
The K4T51163QJ-BCE7 chip is in an FBGA package type. It has a 78-ball form and measures approximately 8mm by 10mm in size.
We provide high quality products, thoughtful service and after sale guarantee
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products
