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$5000K4T51163QG-HCE6
French Electronic Distributor since 1988
Brands: Samsung Semiconductor
Mfr.Part #: K4T51163QG-HCE6
Datasheet: K4T51163QG-HCE6 Datasheet (PDF)
Package/Case: BGA
Product Type: Specialized ICs
RoHS Status:
Stock Condition: 6,554 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Features
JEDEC standard VDD = 1.8V0.1V Power Supply
VDDQ = 1.8V0.1V
200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
4 Banks
Posted CAS
Programmable CAS Latency: 3, 4, 5, 6
Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5
Write Latency(WL) = Read Latency(RL) -1
Burst Length: 4 , 8(Interleave/Nibble sequential)
Programmable Sequential / Interleave Burst Mode
Bi-directional Differential Data-Strobe (Single-ended data strobe is an optional feature)
Off-Chip Driver(OCD) Impedance Adjustment
On Die Termination
Special Function Support
-50ohm ODT
-High Temperature Self-Refresh rate enable
Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95 C
All of products are Lead-Free, Halogen-Free, and RoHS compliant
Application
The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks or 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Case/Package | FBGA |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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![Product]( "Product")
Step1 :Product
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![Vacuum packaging]( "Vacuum packaging")
Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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![Individual packaging]( "Individual packaging")
Step4 :Individual packaging
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![Packaging boxes]( "Packaging boxes")
Step5 :Packaging boxes
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![bar-code shipping tag]( "bar-code shipping tag")
Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The K4T51163QG-HCE6 is a low-power, high-speed synchronous dynamic random-access memory (SDRAM) chip manufactured by Samsung. It has a capacity of 512MB and operates at a frequency of 1333MHz. The chip is commonly used in mobile devices, consumer electronics, and automotive applications due to its energy efficiency and fast data access speeds.
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Equivalent
Equivalent products of K4T51163QG-HCE6 chip include MT47H64M16HR-3, W9725G6JB-25, and M471B5173BH0-YK0. These chips are DDR3 SDRAMs with similar specifications and functionalities. -
Features
The K4T51163QG-HCE6 is a DDR4 SDRAM module manufactured by Samsung. It features a capacity of 8 gigabits (1 gigabyte), operates at a speed of 2400 MHz, and has a low-power design suitable for various computing applications. -
Pinout
The K4T51163QG-HCE6 is a 512Mb DDR2 SDRAM with 60-ball FBGA (Fine-pitch Ball Grid Array) pin configuration. It has 60 pins and functions as a high-speed dynamic random-access memory chip for use in various electronic devices requiring fast data storage and retrieval capabilities. -
Manufacturer
Samsung is the manufacturer of the K4T51163QG-HCE6. Samsung is a South Korean multinational conglomerate that specializes in various consumer electronics, including mobile phones, televisions, and memory chips. They are one of the largest technology companies in the world, known for their innovation and high-quality products. -
Application Field
The K4T51163QG-HCE6 is commonly used in various electronic devices such as smartphones, tablets, laptops, and digital cameras. It serves as a memory component, particularly in systems requiring DDR4 SDRAM. Its applications span consumer electronics, computing, and communication devices, contributing to their memory and processing capabilities. -
Package
The K4T51163QG-HCE6 chip comes in a 78-ball FBGA (Fine-pitch Ball Grid Array) package with a 8Gb (1G x 8) capacity. The chip is in a 17.0mm x 13.4mm x 1.15mm form factor, making it suitable for use in various electronic devices.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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![quantity]( "quantity")
Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products
