K4B1G1646E-HCF8
DDR DRAM, 64MX16, 0.15ns, CMOS, PBGA96,
Brands: SAMSUNG SEMICONDUCTOR INC
Mfr.Part #: K4B1G1646E-HCF8
Datasheet: K4B1G1646E-HCF8 Datasheet (PDF)
Package/Case: FBGA96
Product Type: DRAMs
RoHS Status:
Stock Condition: 6554 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomOvaga has a large stock of K4B1G1646E-HCF8 DRAMs from SAMSUNG SEMICONDUCTOR INC and we guarantee that they are original,brand new parts sourced directly from SAMSUNG SEMICONDUCTOR INC We can provide quality testing reports for K4B1G1646E-HCF8 upon your request. To obtain a quote, simply fill in the required quantity, contact name, and email address in the quick quote form on the right. Our sales representative will contact you within 12 hours.
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC |
Reach Compliance Code | ECCN Code | EAR99 | |
HTS Code | 8542.32.00.32 | Access Time-Max | 0.15 ns |
Clock Frequency-Max (fCLK) | 533 MHz | I/O Type | COMMON |
Interleaved Burst Length | 4,8 | JESD-30 Code | R-PBGA-B96 |
JESD-609 Code | e1 | Memory Density | 1073741824 bit |
Memory IC Type | DDR3 DRAM | Memory Width | 16 |
Moisture Sensitivity Level | 3 | Number of Terminals | 96 |
Number of Words | 67108864 words | Number of Words Code | 64000000 |
Organization | 64MX16 | Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY | Package Code | FBGA |
Package Equivalence Code | BGA96,9X16,32 | Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, FINE PITCH | Peak Reflow Temperature (Cel) | 260 |
Qualification Status | Not Qualified | Refresh Cycles | 8192 |
Sequential Burst Length | 4,8 | Standby Current-Max | 0.01 A |
Supply Current-Max | 0.2 mA | Supply Voltage-Nom (Vsup) | 1.5 V |
Surface Mount | YES | Technology | CMOS |
Terminal Finish | TIN SILVER COPPER | Terminal Form | BALL |
Terminal Pitch | 0.8 mm |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The K4B1G1646E-HCF8 is a 1Gb DDR3 SDRAM chip manufactured by Samsung. It features a high-speed data transfer rate of up to 1600 Mbps and operates at a voltage of 1.5V. This chip is commonly used in electronic devices such as computers, laptops, and servers to provide reliable and fast memory performance.
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Equivalent
The equivalent products of the K4B1G1646E-HCF8 chip are Samsung K4B1G1646E-BCH9, SK Hynix H5TC2G83CFR-RDA, and Micron MT41J128M16HA-125. -
Features
The K4B1G1646E-HCF8 is a 1Gb DDR3 SDRAM chip with a 64Mx16 configuration and a clock frequency of 800MHz. It operates at a voltage of 1.5V and has a data transfer rate of 1600Mbps. This chip is ideal for use in various electronic devices such as laptops, desktops, and servers. -
Pinout
The K4B1G1646E-HCF8 is a 1Gb DDR3 SDRAM with a 96-ball FBGA package. It has a pin count of 96 and is commonly used in memory modules for computing devices. -
Manufacturer
Samsung is the manufacturer of K4B1G1646E-HCF8. Samsung is a South Korean multinational conglomerate company that specializes in various sectors, including electronics, finance, and construction. As one of the largest technology companies in the world, Samsung produces a wide range of products such as smartphones, televisions, memory chips, and home appliances. -
Application Field
The K4B1G1646E-HCF8 is a 4Gb DDR3 SDRAM chip commonly used in computer systems, networking equipment, and other electronic devices requiring high-speed memory. It is suitable for applications such as desktops, laptops, servers, graphics cards, and embedded systems, providing fast and reliable performance for data processing and storage. -
Package
The K4B1G1646E-HCF8 chip is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) in a FBGA (Fine-pitch Ball Grid Array) package with a 78-ball form. It features a 1Gbit capacity organized as 128Mbit x 8.
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products