Infineon JANSR2N7480U3

Part points

• The JANSR2N7480U3 is a high-reliability power MOSFET transistor designed for harsh environments such as space applications. It features low on-resistance and high switching speed, making it ideal for use in power management and switching circuits where reliability is critical.

• Equivalent

  Some equivalent products of JANSR2N7480U3 chip are JANSF2N7480U3, JANSR2N7480U3H, and JANSF2N7480U3H. These chips are all high-reliability transistors designed for aerospace and defense applications.

• Features

  1. High voltage Schottky barrier diode 2. Low reverse leakage current 3. Fast switching speed 4. Ultra-thin, ultra small package 5. Low forward voltage drop 6. RoHS compliant 7. High reliability and durability 8. Suitable for high frequency rectification applications

• Pinout

  JANSR2N7480U3 is a power MOSFET with a pin count of three: gate, drain, and source. The functions of each pin are as follows: - Gate: Controls the switching of the MOSFET - Drain: Connected to the load - Source: Connected to the ground.

• Manufacturer

  The manufacturer of JANSR2N7480U3 is Raytheon Technologies Corporation. Raytheon Technologies Corporation is an American multinational aerospace and defense company that specializes in providing advanced technologies for commercial, military, and government customers worldwide. It operates in four segments: Collins Aerospace, Pratt & Whitney, Raytheon Intelligence & Space, and Raytheon Missiles & Defense.

• Application Field

  JANSR2N7480U3 is a radiation-hardened power MOSFET suitable for space applications, including satellites, spacecraft, and other high radiation environments. It is specifically designed to withstand the harsh conditions of space while providing reliable power switching and control capabilities.

• Package

  The JANSR2N7480U3 chip is a power MOSFET transistor. It comes in a TO-254AA package, with a form molded in a single configuration, and a size of 7.4mm x 6.6mm x 2.54mm.