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Infineon IRF8301MTRPBF

A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance., DIRECTFET, RoHS

ISO14001 ISO9001 DUNS

Brands: Infineon Technologies Corporation

Mfr.Part #: IRF8301MTRPBF

Datasheet: IRF8301MTRPBF Datasheet (PDF)

Package/Case: DirectFET™ Isometric MT

Product Type: Discrete Semiconductors

RoHS Status:

Stock Condition: 3835 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

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Quick Quote

Please submit RFQ for IRF8301MTRPBF or email to us: Email: [email protected], we will contact you within 12 hours.

IRF8301MTRPBF General Description

Benefits: Ultra-low RDS(on); Low Profile (less than 0.7 mm); Dual Sided Cooling Compatible; Ultra-low Package Inductance; Optimized for high speed switching or high current switch (Power Tool); Low Conduction and Switching Losses; Compatible with existing Surface Mount Techniques; StrongIRFET | Target Applications: Battery Operated Drive; Battery Protection; eFuse; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; ORing; Point of Load SyncFET; Push-Pull

Features

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Optimized for 5V gate-drive voltage (called Logic level)
  • Dual-side cooling capability
  • Low package height of 0.7mm
  • Low parasitic (1-2 nH) inductance package
  • 100% lead-free (No RoHS exemption)

Application

  • LED
  • Motor control
  • Notebook

Specifications

Parameter Value Parameter Value
RHoS yes PBFree yes
HalogenFree yes Source Content uid IRF8301MTRPBF
Rohs Code Yes Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon Additional Feature ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 260 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 34 A Drain-source On Resistance-Max 0.0015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-XBCC-N3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material UNSPECIFIED
Package Shape RECTANGULAR Package Style CHIP CARRIER
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 89 W
Pulsed Drain Current-Max (IDM) 250 A Surface Mount YES
Terminal Form NO LEAD Terminal Position BOTTOM
Transistor Application SWITCHING Transistor Element Material SILICON
Series HEXFET® Product Status Obsolete
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 34A (Ta), 192A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.5mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150µA Gate Charge (Qg) (Max) @ Vgs 77 nC @ 4.5 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6140 pF @ 15 V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package DIRECTFET™ MT
Package / Case DirectFET™ Isometric MT

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Datasheet PDF

Preliminary Specification IRF8301MTRPBF PDF Download

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

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