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Infineon IRF360

400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

ISO14001 ISO9001 DUNS

Brands: Infineon

Mfr.Part #: IRF360

Datasheet: IRF360 Datasheet (PDF)

Package/Case: TO-204AE-2

Product Type: MOSFET

RoHS Status:

Stock Condition: 9458 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

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Quick Quote

Please submit RFQ for IRF360 or email to us: Email: [email protected], we will contact you within 12 hours.

IRF360 General Description

Power Field-Effect Transistor, 25A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

Specifications

Parameter Value Parameter Value
Manufacturer: Infineon Product Category: MOSFET
Technology: Si Mounting Style: Through Hole
Package / Case: TO-204AE-2 Transistor Polarity: N-Channel
Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 400 V
Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 230 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 300 W
Channel Mode: Enhancement Brand: Infineon / IR
Configuration: Single Fall Time: 99 ns
Height: 7.74 mm Length: 39.37 mm
Product Type: MOSFET Rise Time: 140 ns
Subcategory: MOSFETs Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 120 ns Typical Turn-On Delay Time: 33 ns
Width: 25.53 mm

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The IRF360 is a power MOSFET chip designed for high-power switching applications in the automotive and industrial sectors. It features low on-resistance, high current capability, and fast switching performance, making it suitable for power control and conversion applications.
  • Equivalent

    Some equivalent products to the IRF360 chip are the IRF350, IRF460, and IRF340. These are all power MOSFET transistors that can be used in similar applications and have comparable specifications to the IRF360.
  • Features

    IRF360 is a Power MOSFET transistor with a maximum drain-source voltage of 400V, a continuous drain current of 23A, and a low on-resistance. It has a low gate charge for fast switching speeds and is suitable for applications requiring high efficiency and high power handling capabilities.
  • Pinout

    The IRF360 is a power MOSFET transistor with a TO-3 package. It has 3 pins: Gate (G), Drain (D), and Source (S). The pin configuration is similar to a standard N-channel MOSFET, with the gate connected to pin 1, drain to pin 2, and source to pin 3.
  • Manufacturer

    The IRF360 is manufactured by Infineon Technologies, a German semiconductor manufacturer specializing in power electronics, automotive electronics, and security technology. Infineon is a leading player in the semiconductor industry, providing innovative solutions for a wide range of applications in various sectors including automotive, industrial, and consumer electronics.
  • Application Field

    The IRF360 is commonly used in electronic applications such as power supplies, motor control, and lighting systems due to its high power handling capabilities and low on-resistance. It is also used in automotive applications for controlling the power to various systems within a vehicle.
  • Package

    The IRF360 chip is packaged in TO-220 form with a size of 10.7 x 29.21 x 34.03 mm.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

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  • quantity

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  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

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