Infineon IRF1010EPBF

Part points

• The IRF1010EPBF chip is a power MOSFET designed for efficient power management applications. It has a low on-state resistance and high current rating, making it suitable for various electrical systems and devices. The chip is commonly used in automotive, industrial, and consumer applications to control and switch high-power loads.

• Equivalent

  Some equivalent products of the IRF1010EPBF chip include the IRF1010E, IRF1010EFPBF, IRF1010ESTRLPBF, and IRF1010EPBF-ND.

• Features

  The IRF1010EPBF is a N-channel MOSFET transistor. It has a drain-source voltage rating of 55V, a continuous drain current of 84A, and a low on-resistance of 14mΩ. It is designed for high-speed switching applications and has a compact TO-220AB package.

• Pinout

  The IRF1010EPBF is a power MOSFET with a TO-220AB packaging. It has three pins: the gate (G), the drain (D), and the source (S). The gate pin is used to control the current flow between the drain and source pins.

• Manufacturer

  The manufacturer of the IRF1010EPBF is Infineon Technologies. It is a multinational semiconductor company that specializes in manufacturing various integrated circuits and solutions for various industries, including automotive, industrial, and power electronics.

• Application Field

  The IRF1010EPBF is a power MOSFET that is commonly used in applications requiring high power and high voltage switching. Some potential application areas include power supplies, motor control, robotics, audio amplifiers, and automotive systems.

• Package

  The IRF1010EPBF chip is a power MOSFET. It comes in a TO-220AB package, which is a through-hole package type commonly used for high-power applications. The package has a size of approximately 10.67mm x 9.53mm x 4.57mm.