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Infineon IPL60R065C7

Name: IPL60R065C7
Rating: 4.5 (10 reviews)

MOSFET HIGH POWER_NEW

Brands: Infineon Technologies Corporation

Mfr.Part #: IPL60R065C7

Datasheet: IPL60R065C7 Datasheet (PDF)

Package/Case: VSON-4

RoHS Status:

Stock Condition: 3283 pcs, New Original

Product Type: Power Field-Effect Transistors

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty	Unit Price	Ext Price
1	$50.005	$50.005
200	$19.352	$3870.400
500	$18.672	$9336.000
1000	$18.336	$18336.000

In Stock:3283 PCS

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Quick Quote

Please submit RFQ for IPL60R065C7 or email to us: Email: [email protected], we will contact you within 12 hours.

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Remark

IPL60R065C7 General Description

The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.

Specifications

Parameter	Value	Parameter	Value
Source Content uid	IPL60R065C7	Rohs Code	Yes
Part Life Cycle Code	Active	Ihs Manufacturer	INFINEON TECHNOLOGIES AG
Package Description	VSON-4	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Avalanche Energy Rating (Eas)	159 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	29 A
Drain-source On Resistance-Max	0.065 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	S-PSSO-N4	JESD-609 Code	e3
Moisture Sensitivity Level	2A	Number of Elements	1
Number of Terminals	4	Operating Mode	ENHANCEMENT MODE
Package Body Material	PLASTIC/EPOXY	Package Shape	SQUARE
Package Style	SMALL OUTLINE	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	135 A	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	NO LEAD
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON

Shipping

	Ship Fee	Lead Time
DHL	$20.00-$40.00 (0.50 KG)	2-5 days
Fedex	$20.00-$40.00 (0.50 KG)	2-5 days
UPS	$20.00-$40.00 (0.50 KG)	2-5 days
TNT	$20.00-$40.00 (0.50 KG)	2-5 days
EMS	$20.00-$40.00 (0.50 KG)	2-5 days
REGISTERED AIR MAIL	$20.00-$40.00 (0.50 KG)	2-5 days

Processing Time：Shipping fee depend on different zone and country.

Payment

Terms of payment		Hand Fee
	Wire Transfer	charge US$30.00 banking fee.
	Paypal	charge 4.0% service fee.
	Credit Card	charge 3.5% service fee.
	Western Union	charge US.00 banking fee.
	Money Gram	charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

Step1 :Product
Step2 :Vacuum packaging
Step3 :Anti-static bag
Step4 :Individual packaging
Step5 :Packaging boxes
Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

Part points

The IPL60R065C7 is a power MOSFET chip designed for applications in high-power density and energy-efficient electronic systems. It is part of Infineon's CoolMOS family, featuring low on-resistance, high switching frequency, and low gate charge. The chip is suitable for various applications like power supplies, motor control, and lighting.
Equivalent

Some equivalent products to the IPL60R065C7 chip include the IRFP4668PBF, STW52N65M5, and IPP60R360C7 power MOSFETs.
Features

The IPL60R065C7 is a power MOSFET transistor with a breakdown voltage of 650V and a maximum current rating of 60A. It is designed for high-efficiency applications, offers low on-resistance, and supports fast switching speeds. The device features a low gate charge, enabling efficient power conversion in various industrial applications.
Pinout

The IPL60R065C7 is a power MOSFET transistor from Infineon Technologies. It has a TO-220 package with 3 pins. The functions of these pins are as follows: Pin 1 (Gate) controls the switching of the transistor, Pin 2 (Drain) carries the main current flow, and Pin 3 (Source) connects to the ground reference.
Manufacturer

Infineon Technologies is the manufacturer of the IPL60R065C7. It is a semiconductor company that specializes in manufacturing and providing a wide range of electronic components and solutions for various industries, including automotive, industrial, and power management.
Application Field

The IPL60R065C7 is a power MOSFET transistor designed for high voltage applications. It can be used in various areas including power supplies, motor control, lighting, and other industrial applications where high voltage switching capabilities are required.
Package

The IPL60R065C7 chip comes in a TO-263-3 package type, TO-263AB form, and has a size of 10.3mm x 17.6mm.

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Infineon