Orders Over
$5000FQPF5N60C
MOSFET 600V N-Ch Q-FET advance C-Series
Brands: onsemi
Mfr.Part #: FQPF5N60C
Datasheet: FQPF5N60C Datasheet (PDF)
Package/Case: TO-220-3
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $0.891 | $0.891 |
10 | $0.742 | $7.420 |
30 | $0.667 | $20.010 |
100 | $0.593 | $59.300 |
500 | $0.549 | $274.500 |
1000 | $0.525 | $525.000 |
In Stock: 9,458 PCS
FQPF5N60C General Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
- 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10V
- Low gate charge (typical 15 nC)
- Low Crss (typical 6.5 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Manufacturer: | onsemi | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V | Id - Continuous Drain Current: | 4.5 A |
Rds On - Drain-Source Resistance: | 2.5 Ohms | Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V | Qg - Gate Charge: | 15 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 33 W | Channel Mode: | Enhancement |
Series: | FQPF5N60C | Packaging: | Tube |
Brand: | onsemi / Fairchild | Configuration: | Single |
Fall Time: | 46 ns | Forward Transconductance - Min: | 4.7 S |
Height: | 16.3 mm | Length: | 10.67 mm |
Product Type: | MOSFET | Rise Time: | 42 ns |
Factory Pack Quantity: | 1000 | Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel | Type: | MOSFET |
Typical Turn-Off Delay Time: | 38 ns | Typical Turn-On Delay Time: | 10 ns |
Width: | 4.7 mm | Part # Aliases: | FQPF5N60C_NL |
Unit Weight: | 0.068784 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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FQPF5N60C is a semiconductor chip mainly used as a power MOSFET. It has a voltage rating of 600V and a current rating of 5A. This chip is commonly used in applications such as power supplies, motor control circuits, and high-frequency switching circuits. It offers low on-resistance, fast switching speed, and high reliability, making it suitable for various power electronic applications.
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Equivalent
Some equivalent products of the FQPF5N60C chip include IRF5N60C, HUF5N60C, and STW5N60C. -
Features
The FQPF5N60C is a field-effect transistor (FET) with a voltage rating of 600V and a continuous drain current of 4.5A. It has a low on-state resistance, high switching speed, and is suitable for various power switching applications. -
Pinout
The FQPF5N60C is a 600V N-Channel MOSFET transistor. It has a pin count of 3 pins: Gate (G), Drain (D), and Source (S). The function of the FQPF5N60C is to control the flow of current within an electrical circuit by modulating the voltage applied to the gate pin. -
Manufacturer
The manufacturer of the FQPF5N60C is Fairchild Semiconductor. It is a global semiconductor company specializing in the manufacturing of power and signal management, logic, discrete, and custom devices. -
Application Field
The FQPF5N60C is a MOSFET transistor commonly used in various applications such as switching power supplies, motor control, audio amplifiers, and consumer electronics. It is designed for high voltage and high-speed switching, making it suitable for a wide range of industrial and consumer electronic devices. -
Package
The FQPF5N60C chip is in a TO-220 package type. It is in a through-hole form, meaning its leads are inserted into holes in the circuit board for soldering. The size is relatively standard for TO-220 packages, measuring approximately 10.16mm by 15.88mm.
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