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FQPF10N60C
N-Channel 600 V 9.5A (Tc) 50W (Tc) Through Hole TO-220F-3
Brands: Onsemi
Mfr.Part #: FQPF10N60C
Datasheet: FQPF10N60C Datasheet (PDF)
Package/Case: TO-220-3
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomFQPF10N60C General Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
- 9.5 A, 600 V, RDS(on) = 730 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A
- Low Gate Charge (Typ. 44 nC)
- Low Crss (Typ. 18 pF)
- 100% Avalanche Tested
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | Through Hole | Package / Case | TO-220-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 9.5 A |
| Rds On - Drain-Source Resistance | 730 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V | Qg - Gate Charge | 44 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 50 W | Channel Mode | Enhancement |
| Series | FQPF10N60C | Brand | onsemi / Fairchild |
| Configuration | Single | Fall Time | 77 ns |
| Height | 16.3 mm | Length | 10.67 mm |
| Product Type | MOSFET | Rise Time | 69 ns |
| Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Type | MOSFET |
| Typical Turn-Off Delay Time | 144 ns | Typical Turn-On Delay Time | 23 ns |
| Width | 4.7 mm | Part # Aliases | FQPF10N60C_NL |
| Unit Weight | 0.068784 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FQPF10N60C is a high-performance N-channel MOSFET chip designed for power switching applications. It has a maximum current rating of 10A and a breakdown voltage of 600V, making it suitable for a variety of power supply, motor control, and lighting applications. Additionally, it features a low on-resistance and high switching speeds for efficient operation.
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Equivalent
The equivalent products of FQPF10N60C chip are STF10N60DM2, 10N60C, IRF10N60, and FQP10N60C. These chips have similar specifications and can serve as direct replacements for the FQPF10N60C in various applications. -
Features
FQPF10N60C is a 600V N-Channel MOSFET transistor with a continuous drain current of 10A, low on-resistance of 0.52 ohms, and fast switching speed. It has a TO-220F package, suitable for high power applications such as power supplies, motor control, and inverters. -
Pinout
FQPF10N60C is a MOSFET transistor with 3 pins: Gate (G), Drain (D), and Source (S). It has a pin count of 3 and is typically used for power switching applications due to its low on-resistance and high current handling capability. -
Manufacturer
FQPF10N60C is manufactured by Fairchild Semiconductor, which is a global semiconductor company specializing in power management, analog and mixed signal technologies. Fairchild Semiconductor provides solutions for a wide range of industries such as automotive, consumer electronics, industrial and telecommunications. They are known for their high-quality products and innovative technologies in the semiconductor industry. -
Application Field
FQPF10N60C is a MOSFET transistor commonly used in power supply applications, motor control, and lighting systems. It can also be found in inverters, converters, and DC-DC converters. Its high voltage and current-handling capabilities make it suitable for switching and amplification in a wide range of electronic devices. -
Package
The FQPF10N60C is a TO-220F package type power MOSFET chip with a form of through-hole mounting. It has a size of 10mm x 16mm x 4.5mm.
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