FQP55N10

Part points

• The FQP55N10 chip is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high power applications. It offers low on-resistance and high switching speed, making it suitable for use in power supplies, motor control, and other demanding applications. The chip provides efficient power handling capabilities and is commonly used in a wide range of electronic devices requiring high-current switching.

• Equivalent

  Some equivalent products to the FQP55N10 chip include the IRF1404, IRF3710, and FQP50N06. They all have similar specifications and can be used as substitutes in various applications.

• Features

  The FQP55N10 is a MOSFET transistor with a VDSS rating of 100 volts, a continuous drain current of 55 amps, and a low on-resistance of 0.024 ohms. It has a TO-220 package, making it suitable for high-power switching applications.

• Pinout

  The FQP55N10 is a power MOSFET with a TO-220 package. It has three pins: gate (G), drain (D), and source (S). The pin count is 3, and the function of each pin is as follows: - G: controls the flow of current between D and S - D: serves as the output terminal for the current - S: serves as the input terminal for the current

• Manufacturer

  The manufacturer of the FQP55N10 is Fairchild Semiconductor. It is a global company that specializes in the design, development, and production of power semiconductor products.

• Application Field

  The FQP55N10 is a power MOSFET that can be used in various applications such as power supplies, motor control, lighting systems, and inverter circuits. It can handle high currents and provide efficient power switching, making it suitable for different types of electronic devices and systems.

• Package

  The FQP55N10 chip comes in a TO-220 package type, has a single form (device type), and its size is typically 10.16 mm x 4.83 mm x 9.91 mm.