Orders Over
$5000FQP30N06L
MOSFET 60V N-Channel QFET Logic Level
Brands: onsemi
Mfr.Part #: FQP30N06L
Datasheet: FQP30N06L Datasheet (PDF)
Package/Case: TO-220-3
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $1.528 | $1.528 |
10 | $1.323 | $13.230 |
30 | $1.195 | $35.850 |
100 | $1.065 | $106.500 |
500 | $1.005 | $502.500 |
1000 | $0.980 | $980.000 |
In Stock: 9,458 PCS
FQP30N06L General Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications
Features
- 32A, 60V, RDS(on) = 35mΩ(Max.) @VGS = 10 V, ID = 16A
- Low gate charge ( Typ. 15nC)
- Low Crss ( Typ. 50pF)
- 100% avalanche tested
- 175°C maximum junction temperature rating
Application
- Other Audio & Video
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Manufacturer: | onsemi | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V | Id - Continuous Drain Current: | 32 A |
Rds On - Drain-Source Resistance: | 27 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V | Qg - Gate Charge: | 20 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 79 W | Channel Mode: | Enhancement |
Tradename: | QFET | Series: | FQP30N06L |
Packaging: | Tube | Brand: | onsemi / Fairchild |
Configuration: | Single | Fall Time: | 110 ns |
Forward Transconductance - Min: | 24 S | Height: | 16.3 mm |
Length: | 10.67 mm | Product Type: | MOSFET |
Rise Time: | 210 ns | Factory Pack Quantity: | 1000 |
Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
Type: | MOSFET | Typical Turn-Off Delay Time: | 60 ns |
Typical Turn-On Delay Time: | 15 ns | Width: | 4.7 mm |
Part # Aliases: | FQP30N06L_NL |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FQP30N06L is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching applications. It's designed for low on-resistance and high current capability, making it suitable for power management tasks like motor control, LED lighting, and voltage regulation.
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Equivalent
The FQP30N06L is a MOSFET transistor. Equivalent products include IRFZ44N, IRF3205, and IRF1405. These are N-channel MOSFETs with similar specifications and can be used as substitutes in many applications. Always check datasheets for compatibility and performance details. -
Features
The FQP30N06L is an N-channel MOSFET transistor with a voltage rating of 60V, a continuous drain current of 32A, and a low on-resistance. It's commonly used in power management applications due to its high efficiency and fast switching speed. -
Pinout
The FQP30N06L is a MOSFET transistor with three pins: gate (G), drain (D), and source (S). It functions as a switch or amplifier in electronic circuits. The pinout is typically G-S-D. It's commonly used in power management applications due to its low ON resistance and high switching speed. -
Manufacturer
The FQP30N06L is manufactured by Fairchild Semiconductor, an American semiconductor company. It specializes in the design and production of power management devices, including MOSFETs like the FQP30N06L. Fairchild Semiconductor is known for its contributions to power supply technology and is a key player in the semiconductor industry. -
Application Field
The FQP30N06L is commonly used in low-frequency switching applications such as power supplies, motor control, and LED lighting. It can also be utilized in general-purpose amplification circuits. -
Package
The FQP30N06L is a TO-220 package MOSFET chip. It's in a through-hole form factor with dimensions typically around 10mm x 15mm x 4mm.
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