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ON FDT457N
MOSFET SOT-223 N-CH 30V
Brands: ON Semiconductor, LLC
Mfr.Part #: FDT457N
Datasheet: FDT457N Datasheet (PDF)
Package/Case: SOT-223
Product Type: Transistors
FDT457N General Description
These N-Channel enhancement mode power field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
Features
- 5 A, 30 V
RDS(ON) = 0.06 Ω @ VGS = 10 V
RDS(ON) = 0.090 Ω @ VGS = 4.5 V - High density cell design for extremely low RDS(ON)
- High power and current handling capability in a widely used surface mount package
Application
- This product is general usage and suitable for many different applications.
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Source Content uid | FDT457N | Pbfree Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
| Manufacturer Package Code | 318H-01 | Reach Compliance Code | not_compliant |
| ECCN Code | EAR99 | Samacsys Manufacturer | onsemi |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 5 A |
| Drain-source On Resistance-Max | 0.06 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G4 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 4 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 3 W | Pulsed Drain Current-Max (IDM) | 16 A |
| Qualification Status | Not Qualified | Surface Mount | YES |
| Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
| Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
| Pin Count | 4 | Package Category | Other |
| Released Date | Oct 3, 2022 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDT457N chip is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that operates as a high-speed switching device. It is commonly used in applications where efficient power management is required, such as in motor control, LED lighting, and power supplies. The chip offers low on-resistance and low gate charge, making it suitable for high-current and high-frequency applications.
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Features
The FDT457N is not a specific product or model that can be identified. It is likely a typo or an incorrect reference. Please provide more information or correct the model number to receive relevant features. -
Pinout
The FDT457N is a N-channel MOSFET transistor with a TO-252 package. It has three pins including gate, drain, and source. The pin count is 3 and the function of each pin is as follows: 1. Gate: Controls the flow of current through the transistor 2. Drain: Current flows out of the transistor through this pin 3. Source: Current flows into the transistor through this pin. -
Application Field
The FDT457N is commonly used in power electronics applications such as switch-mode power supplies, motor control systems, and industrial automation. It is specifically designed for high-current switching applications and provides efficient power management in various electronic devices. -
Package
The FDT457N chip has a surface mount package type with a form factor of SOT-223. Its size is typically 6.70mm (length) x 6.70mm (width) x 2.30mm (height).
Datasheet PDF
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products
Expected more for the price.