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ON HUF75639S3ST
MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm
Brands: ON Semiconductor, LLC
Mfr.Part #: HUF75639S3ST
Datasheet: HUF75639S3ST Datasheet (PDF)
Package/Case: TO-263
RoHS Status:
Stock Condition: 2716 pcs, New Original
Product Type: Transistors
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1
*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $1.391 | $1.391 |
| 10 | $1.361 | $13.610 |
| 30 | $1.341 | $40.230 |
| 100 | $1.321 | $132.100 |
In Stock:2716 PCS
HUF75639S3ST General Description
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Features
- 56A, 100V
- Temperature Compensated PSPICE® and SABER™ Electrical Models
- SPICE and SABER Thermal Impedance Models
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
Application
- AC-DC Merchant Power Supply
- Consumer Appliances
- DC-DC Merchant Power Supply
- Desktop PC
- Distribution
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Status | Active | CAD Models | |
| Compliance | PbAHP | Package Type | D2PAK-3 / TO-263-2 |
| Case Outline | 418AJ | MSL Type | 1 |
| MSL Temp (°C) | 245 | Container Type | REEL |
| Container Qty. | 800 | ON Target | Y |
| Channel Polarity | N-Channel | Configuration | Single |
| V(BR)DSS Min (V) | 100 | VGS Max (V) | ±20 |
| VGS(th) Max (V) | 4 | ID Max (A) | 56 |
| PD Max (W) | 200 | RDS(on) Max @ VGS = 2.5 V (mΩ) | - |
| RDS(on) Max @ VGS = 4.5 V (mΩ) | - | RDS(on) Max @ VGS = 10 V (mΩ) | 25 |
| Qg Typ @ VGS = 4.5 V (nC) | - | Qg Typ @ VGS = 10 V (nC) | 57 |
| Ciss Typ (pF) | 2000 | Pricing ($/Unit) | $1.1805Sample |
| Case/Package | TO-263-3 | Mount | Surface Mount |
| Number of Pins | 3 | Weight | 1.31247 g |
| Continuous Drain Current (ID) | 56 A | Current Rating | 56 A |
| Drain to Source Breakdown Voltage | 100 V | Drain to Source Resistance | 25 mΩ |
| Drain to Source Voltage (Vdss) | 100 V | Element Configuration | Single |
| Fall Time | 25 ns | Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 2 nF | Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C | Max Power Dissipation | 200 W |
| Min Operating Temperature | -55 °C | Number of Channels | 1 |
| Number of Elements | 1 | Power Dissipation | 200 W |
| Rds On Max | 25 mΩ | Resistance | 25 mΩ |
| Rise Time | 60 ns | Turn-Off Delay Time | 20 ns |
| Turn-On Delay Time | 15 ns | Voltage Rating (DC) | 100 V |
| Height | 5.08 mm |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The HUF75639S3ST is a high-performance power MOSFET chip. It is designed to handle high voltage and current in various electronics applications. This chip offers low on-resistance, high switching speeds, and excellent thermal performance. It is commonly used in power supplies, motor control, and other high-power applications where efficient and reliable performance is crucial.
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Equivalent
The equivalent products of the HUF75639S3ST chip may include the FDS9385, IRF6645, IRF7789, IRLR7730, IRFI7750G, or IRFS7730. -
Pinout
The HUF75639S3ST is a power MOSFET. It has a pin count of 8 and is used for high-speed switching applications. -
Application Field
The HUF75639S3ST is a power MOSFET transistor designed for use in applications that require high efficiency and high performance. It can be used in a variety of applications, including power supplies, motor control, and automotive systems. -
Package
The HUF75639S3ST chip is available in a TO-263AB package type, surface mount form, and has a size of 10.16mm x 10.16mm x 4.57mm.
Datasheet PDF
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products
Fast shipping, great prices, and high-quality components - what more could you ask for?