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Infineon SPP07N60C3
Low resistance 600mΩ at 10V, 4.6A voltage rating
Brands: Infineon
Mfr.Part #: SPP07N60C3
Datasheet: SPP07N60C3 Datasheet (PDF)
Package/Case: TO-220
RoHS Status:
Stock Condition: 2,109 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $2.525 | $2.525 |
| 10 | $2.322 | $23.220 |
| 30 | $2.195 | $65.850 |
| 100 | $2.065 | $206.500 |
| 500 | $2.008 | $1004.000 |
| 1000 | $1.982 | $1982.000 |
In Stock: 2,109 PCS
SPP07N60C3 General Description
The SPP07N60C3 is a power MOSFET transistor designed for high efficiency and high speed switching applications. This transistor is part of the CoolMOS series from Infineon Technologies, known for their superior performance and reliability.The SPP07N60C3 has a drain-source voltage rating of 600 volts and a continuous drain current rating of 7.0 amperes. This makes it suitable for a wide range of power supply and inverter applications. The transistor has a low on-state resistance of 1.0 ohms, which reduces power losses and improves efficiency in switching circuits.The SPP07N60C3 is designed to operate at high frequencies, making it ideal for use in switching power supplies, motor drives, and other high frequency applications. The transistor features a fast switching speed and low gate charge, ensuring rapid turn-on and turn-off times to minimize switching losses.
Features
- Low on-state resistance
- Fast switching speed
- Enhanced diode recovery time
- Improved avalanche energy
- Low EMI
- High dv/dt capability
- Isolated central mounting hole
- High ruggedness
- Enhanced gate oxide reliability
- Low thermal resistance
Application
- Motor control
- Renewable energy systems
- Switched mode power supplies
- Lighting systems
- Industrial drives
- Electric vehicle charging systems
- Power factor correction
- Solar inverters
- Uninterruptible power supplies
- Power factor correction
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| RthJC max | 1.5 K/W | IDpuls max | 21.9 A |
| RthJA max | 62.0 K/W | Ptot max | 83.0 W |
| VDS max | 600.0 V | Polarity | N |
| ID max | 7.3 A | RDS (on) max | 600.0 mΩ |
| Mounting | THT | Package | TO-220 |
| VGS(th) max | 3.9 V | VGS(th) min | 2.1 V |
| Operating Temperature max | 150.0 °C |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Equivalent Parts
For the SPP07N60C3 component, you may consider these replacement and alternative parts:
Part Number
Brands
Package
Description
Part Number : IRFP460A
Brands : Infineon Technologies
Package :
Description :
Part Number : FDPF7N60NZ
Brands :
Package :
Description : by Fairchild Semiconductor
Part Number : STP7N60C3
Brands : STMicroelectronics
Package :
Description :
Part Number : IPP07CN10N
Brands : Toshiba Semiconductor and Storage
Package :
Description :
Part points
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The SPP07N60C3 is a power MOSFET chip designed for high-voltage applications. It operates at 600V and has a current rating of 7A. The chip offers low on-resistance and high efficiency, making it suitable for various power conversion and switching applications. With its advanced design and robust construction, the SPP07N60C3 offers a reliable and efficient solution for power electronics systems.
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Equivalent
The equivalent products of SPP07N60C3 chip are STP7NK60ZFP, IPW60R037CEXKSA1, FQB7N60C, and IPP60R075C7. -
Features
SPP07N60C3 is a power MOSFET transistor with a voltage rating of 600V, a current rating of 7A, and a RDS(on) resistance of 0.66Ω. It is designed for use in various power management applications, offering low switching losses, high efficiency, and a compact TO-220 package. -
Pinout
The SPP07N60C3 is a MOSFET power transistor. It has 3 pins: Gate (G), Source (S), and Drain (D). The Gate pin is used to control the transistor's conductivity between the Source and Drain pins. The Source pin is connected to the ground, while the Drain pin is connected to the load or power supply. -
Manufacturer
Infineon Technologies is the manufacturer of the SPP07N60C3. Infineon is a German semiconductor company that produces a wide range of products, including power semiconductors, microcontrollers, and sensors. It serves various industries such as automotive, industrial, and consumer electronics, providing solutions for energy efficiency, mobility, and security. -
Application Field
The SPP07N60C3 is a power MOSFET transistor commonly used in various electronic devices and applications. It is suitable for switching and amplifying applications in power supplies, motor control, UPS systems, industrial equipment, and lighting fixtures. -
Package
The SPP07N60C3 chip is a power MOSFET transistor. It is packaged in a TO-220 form factor, which is a widely used package type for power semiconductors. The size of the chip's package is approximately 10.3mm x 15.5mm x 4.7mm (height x length x width).
Datasheet PDF
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