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Infineon SGW25N120
IGBT NPT 1200 V 46 A 313 W Through Hole PG-TO247-3-1
Brands: INFINEON
Mfr.Part #: SGW25N120
Datasheet: SGW25N120 Datasheet (PDF)
Package/Case: TO-247
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: IGBT Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $15.585 | $15.585 |
| 200 | $6.031 | $1206.200 |
| 500 | $5.819 | $2909.500 |
| 1000 | $5.715 | $5715.000 |
In Stock:9458 PCS
SGW25N120 General Description
Infineon offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers, welding and SMPS segments.
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| IC max | 46.0 A | ICpuls max | 84.0 A |
| VCE max | 1200.0 V | Switching Frequency max | 40.0 kHz |
| Switching Frequency min | 10.0 kHz | Ptot max | 313.0 W |
| Package | TO-247 | Switching Frequency | Fast IGBT 10-40 kHz |
| Technology | IGBT Fast |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SGW25N120 chip is a power semiconductor device commonly used in various electronic applications. It is a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) capable of handling high voltage and current. The chip offers low on-resistance, high switching speed, and high temperature capability, making it suitable for power conversion and motor control requirements.
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Equivalent
The equivalent products of the SGW25N120 chip are the STW25N120K3, IRFW25N120D, HGTG25N120BN, and IHW25N120R3. -
Features
The SGW25N120 is a silicon carbide (SiC) Schottky diode. Its features include a low forward voltage drop, fast switching capability, and high temperature operation. This diode also has a high surge current capability, low leakage current, and excellent thermal performance, making it suitable for various high-power applications. -
Pinout
The pin count of the SGW25N120 is 3. It has 2 pins for the drain and source, and 1 pin for the gate. The drain is the output terminal, the source is the ground terminal, and the gate controls the flow of current in the device. -
Manufacturer
Infineon Technologies AG is the manufacturer of the SGW25N120. It is a multinational semiconductor manufacturer. -
Application Field
The SGW25N120 is a silicon carbide (SiC) power semiconductor designed for use in high-voltage, high-frequency applications. It can be used in various application areas, including industrial drives, renewable energy generation systems, electric vehicles, and high-efficiency power supplies. -
Package
The SGW25N120 chip is a power metal-oxide-semiconductor field-effect transistor (MOSFET). Its package type is TO-247 (Transistor Outline 247) which is a large, through-hole package. The size dimensions of the chip are approximately 15.5mm x 20.4mm.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products
