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H5AN8G6NCJR-VKC
DDR DRAM,
Brands: SK HYNIX INC
Mfr.Part #: H5AN8G6NCJR-VKC
Datasheet: H5AN8G6NCJR-VKC Datasheet (PDF)
Package/Case: FBGA
RoHS Status:
Stock Condition: 6554 pcs, New Original
Product Type: DRAMs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $5.890 | $5.890 |
| 10 | $5.590 | $55.900 |
| 30 | $4.792 | $143.760 |
| 100 | $4.639 | $463.900 |
In Stock:6554 PCS
H5AN8G6NCJR-VKC General Description
FEATURES• VDD=VDDQ=1.2V +/- 0.06V• Fully differential clock inputs (CK, CK) operation• Differential Data Strobe (DQS, DQS)• On chip DLL align DQ, DQS and DQS transition with CKtransition• DM masks write data-in at the both rising and falling edges of the data strobe• All addresses and control inputs except data, datastrobes and data masks latched on the rising edges ofthe clock• Programmable CAS latency 9, 10, 11, 12, 13, 14, 15,16, 17, 18, 19 and 20 supported• Programmable additive latency 0, CL-1, and CL-2 supported (x4/x8 only)• Programmable CAS Write latency (CWL) = 9, 10, 11,12, 14, 16, 18• Programmable burst length 4/8 with both nibble sequential and interleave mode• BL switch on the fly• 16banks• Average Refresh Cycle (Tcase of 0 oC~ 95 oC)- 7.8 μs at 0oC ~ 85 oC- 3.9 μs at 85oC ~ 95 oC• JEDEC standard 78ball FBGA(x4/x8), 78ball FBGA(x16)• Driver strength selected by MRS• Dynamic On Die Termination supported• Two Termination States such as RTT_PARK andRTT_NOM switchable by ODT pin• Asynchronous RESET pin supported• ZQ calibration supported• TDQS (Termination Data Strobe) supported (x8 only)• Write Levelization supported• 8 bit pre-fetch• This product in compliance with the RoHS directive.• Internal Vref DQ level generation is available• Write CRC is supported at all speed grades• Maximum Power Saving Mode is supported• TCAR(Temperature Controlled Auto Refresh) mode issupported• LP ASR(Low Power Auto Self Refresh) mode is supported• Fine Granularity Refresh is supported• Per DRAM Addressability is supported• Geardown Mode(1/2 rate, 1/4 rate) is supported• Programable Preamble for read and write is supported• Self Refresh Abort is supported• CA parity (Command/Address Parity) mode is supported• Bank Grouping is applied, and CAS to CAS latency(tCCD_L, tCCD_S) for the banks in the same or differentbank group accesses are available• DBI(Data Bus Inversion) is supported(x8)• This product consist of a half chip of 8Gb die• A15 address pin is fixed as Low or High• Support X8 mode only• tRFC2min and tRFC4min have longer spec value thannormal 4Gb die (Table12)
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | SK HYNIX INC | Package Description | FBGA-96 |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| HTS Code | 8542.32.00.36 | Access Mode | MULTI BANK PAGE BURST |
| Additional Feature | AUTO/SELF REFRESH | JESD-30 Code | R-PBGA-B96 |
| Length | 13 mm | Memory Density | 8589934592 bit |
| Memory IC Type | DDR4 DRAM | Memory Width | 16 |
| Number of Functions | 1 | Number of Ports | 1 |
| Number of Terminals | 96 | Number of Words | 536870912 words |
| Number of Words Code | 512000000 | Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 °C | Operating Temperature-Min | |
| Organization | 512MX16 | Package Body Material | PLASTIC/EPOXY |
| Package Code | TFBGA | Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Seated Height-Max | 1.2 mm | Self Refresh | YES |
| Supply Voltage-Max (Vsup) | 1.26 V | Supply Voltage-Min (Vsup) | 1.14 V |
| Supply Voltage-Nom (Vsup) | 1.2 V | Surface Mount | YES |
| Technology | CMOS | Temperature Grade | OTHER |
| Terminal Form | BALL | Terminal Pitch | 0.8 mm |
| Terminal Position | BOTTOM | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Width | 7.5 mm |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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H5AN8G6NCJR-VKC is a memory chip. It is a 1Gx8bit CMOS SDRAM, designed for mobile applications. This chip provides high-speed, low-power operation and is suitable for a wide range of devices, including smartphones and tablets. Its compact size and efficient performance make it a popular choice for memory-intensive applications.
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Features
The H5AN8G6NCJR-VKC is a DDR4 SDRAM with 8GB capacity. It operates at a high speed of 3200Mbps and has a low power voltage of 1.2V. This module is designed for use in various computing systems and offers a compact size and high performance for improved data processing. -
Pinout
The H5AN8G6NCJR-VKC has a pin count of 78 and is a 1G bit DDR2 SDRAM chip. It is used for data storage and processing in electronic devices such as computers and servers. -
Manufacturer
SK Hynix Inc. is the manufacturer of the H5AN8G6NCJR-VKC. SK Hynix is a South Korean semiconductor company that specializes in producing dynamic random-access memory (DRAM) chips and flash memory chips. -
Application Field
The H5AN8G6NCJR-VKC is a versatile DRAM memory component that can be used in a wide range of applications, including servers, data centers, high-performance computing, networking equipment, and automotive infotainment systems. Its high capacity and speed make it suitable for demanding tasks that require fast and reliable data storage and retrieval. -
Package
The H5AN8G6NCJR-VKC chip has a package type of FBGA, form factor of 78-ball, and a size of 8 gigabytes.
We provide high quality products, thoughtful service and after sale guarantee
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products
