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NXP MRFE6S9125NR1

RF Mosfet 28 V 950 mA 880MHz 20.2dB 27W TO-270 WB-4

ISO14001 ISO9001 DUNS

Brands: NXP Semiconductor

Mfr.Part #: MRFE6S9125NR1

Datasheet: MRFE6S9125NR1 Datasheet (PDF)

Package/Case: TO-270

RoHS Status:

Stock Condition: 3976 pcs, New Original

Product Type: Transistors

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $45.808 $45.808
200 $17.728 $3545.600
500 $17.104 $8552.000
1500 $16.798 $25197.000

In Stock:3976 PCS

- +

Quick Quote

Please submit RFQ for MRFE6S9125NR1 or email to us: Email: [email protected], we will contact you within 12 hours.

MRFE6S9125NR1 General Description

RF Mosfet 28 V 950 mA 880MHz 20.2dB 27W TO-270 WB-4

mrfe6s9125nr1

Features

  • Frequency range: 860 MHz to 960 MHz
  • Output power: 125W (typical)
  • Drain-source voltage: 65V (max)
  • Input capacitance: 250pF (typical)
  • Output capacitance: 60pF (typical)

Application

  • Cellular base station power amplifiers
  • Industrial, scientific, and medical (ISM) applications
  • Aerospace and defense applications
  • Radio and television broadcasting

Specifications

Parameter Value Parameter Value
Manufacturer: NXP Product Category: RF MOSFET Transistors
RoHS: Details Transistor Polarity: N-Channel
Technology: Si Vds - Drain-Source Breakdown Voltage: - 500 mV, 66 V
Operating Frequency: 880 MHz Gain: 20.2 dB
Output Power: 27 W Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT
Package / Case: TO-270-4 Packaging: Reel
Brand: NXP Semiconductors Channel Mode: Enhancement
Configuration: Single Height: 2.64 mm
Length: 17.58 mm Moisture Sensitive: Yes
Number of Channels: 1 Channel Product Type: RF MOSFET Transistors
Series: MRFE6S9125N Factory Pack Quantity: 500
Subcategory: MOSFETs Type: RF Power MOSFET
Vgs - Gate-Source Voltage: - 500 mV, 12 V Vgs th - Gate-Source Threshold Voltage: 2.1 V
Width: 9.07 mm Part # Aliases: 935314059528
Unit Weight: 0.058073 oz

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The MRFE6S9125NR1 chip is a high-performance RF power amplifier module designed for wireless infrastructure applications. It operates in the frequency range of 2110-2170 MHz, making it suitable for use in 3G and 4G base stations and small cell systems. It offers high gain and efficiency, allowing for extended coverage and improved network performance.
  • Equivalent

    Some equivalent products of the MRFE6S9125NR1 chip include MRF6S9125N, MRF6S9145N, and MRF6S9160N. These chips are all part of the same series and have similar specifications, making them suitable alternatives for various applications.
  • Features

    The MRFE6S9125NR1 is a high-frequency power transistor with a frequency range up to 1 GHz. It has a single-sided active device configuration, a high gain for better power performance, and a rugged design for high-reliability applications.
  • Pinout

    The MRFE6S9125NR1 is a high-performance RF power field-effect transistor. It has 11 pins and functions as a power amplifier in wireless communication applications.
  • Manufacturer

    NXP Semiconductors is the manufacturer of the MRFE6S9125NR1. It is a semiconductor company that designs and produces a wide range of integrated circuits and semiconductor solutions for various industries, including automotive, industrial, and consumer electronics.
  • Application Field

    The MRFE6S9125NR1 is a high-power RF transistor commonly used in applications such as cellular base stations, broadcast transmitters, and ISM (industrial, scientific, and medical) equipment. It offers high performance, high power output, and excellent linearity, making it suitable for various RF power amplifier designs.
  • Package

    The MRFE6S9125NR1 chip is available in a power MOSFET package type called NI-780H. The chip is in a surface mount form with a size of 18.4mm x 13.6mm.

Datasheet PDF

Preliminary Specification MRFE6S9125NR1 PDF Download

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