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NXP BLF278

RF Mosfet 50 V 200 mA 18dB 300W CDFM4

ISO14001 ISO9001 DUNS

Brands: NXP Semiconductor

Mfr.Part #: BLF278

Datasheet: BLF278 Datasheet (PDF)

Package/Case: SOT-262

RoHS Status:

Stock Condition: 350 pcs, New Original

Product Type: Transistors

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $2.654 $2.654
200 $1.028 $205.600
500 $0.992 $496.000
1000 $0.973 $973.000

In Stock:350 PCS

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Quick Quote

Please submit RFQ for BLF278 or email to us: Email: [email protected], we will contact you within 12 hours.

BLF278 General Description

The BLF278 is a high-power RF (Radio Frequency) transistor, specifically a laterally diffused metal-oxide-semiconductor (LDMOS) transistor, designed for use in high-power RF amplification applications. These transistors are known for their high output power capabilities and are used in various RF power amplifiers. 

blf278

Features

High Output Power: BLF278 transistors are capable of delivering high RF output power, making them suitable for high-power RF amplifiers.

LDMOS Technology: They are based on LDMOS technology, which provides good linearity, efficiency, and power handling capabilities in RF applications.

Broadband Operation: BLF278 transistors are designed for broadband operation, which means they can amplify a wide range of frequencies.

High Gain: These transistors typically have high gain, which is crucial for amplifying weak RF signals.

Single-Ended or Push-Pull Configurations: They can be used in both single-ended and push-pull configurations, allowing flexibility in amplifier design.

Robust Construction: BLF278 transistors are built to withstand the demands of high-power RF applications and are often used in rugged environments.

blf278

Application

Amateur Radio: They are used in high-power amateur radio amplifiers to boost the output power of radio transmitters.

Broadcasting: In broadcasting systems, BLF278 transistors can be found in transmitters for radio and television stations to amplify broadcast signals.

Wireless Communication: They are used in wireless communication systems, including cellular base stations, to increase the coverage area and signal strength.

Radar Systems: BLF278 transistors are employed in radar systems for their high-power capabilities, helping to transmit and receive radar signals over long distances.

Military and Defense: In military applications, these transistors are used in various RF systems, including radar, jammers, and communication equipment.

Scientific Research: High-power RF amplifiers with BLF278 transistors are used in scientific research, such as in particle accelerators and experimental physics setups.

Medical Equipment: In medical applications like MRI machines and RF ablation systems, these transistors help amplify RF signals for various diagnostic and therapeutic purposes.

blf278

Specifications

Parameter Value Parameter Value
Manufacturer: Advanced Semiconductor, Inc. Product Category: RF MOSFET Transistors
RoHS: Details Transistor Polarity: Dual N-Channel
Technology: Si Id - Continuous Drain Current: 40 A
Vds - Drain-Source Breakdown Voltage: 125 V Rds On - Drain-Source Resistance: 5 mOhms
Operating Frequency: 175 MHz Gain: 16 dB
Output Power: 300 W Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 200 C Mounting Style: Flange Mount
Packaging: Tray Brand: Advanced Semiconductor, Inc.
Product Type: RF MOSFET Transistors Factory Pack Quantity: 1
Subcategory: MOSFETs

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Equivalent Parts

For the BLF278 component, you may consider these replacement and alternative parts:

Part Number

Brands

Package

Description

Part Number :   MRF151G

Brands :  

Package :  

Description :  

Part Number :   MRF151A

Brands :  

Package :  

Description :  

Part Number :   BLF178XR

Brands :  

Package :   SOT539

Description :  

Part Number :   BLF178XRS

Brands :  

Package :  

Description :  

Part Number :   BLF574

Brands :  

Package :   TO-59

Description :   SOT,,Trans RF MOSFET N-CH 110V 42A 5-Pin LDMOST

Part Number :   BLF575

Brands :  

Package :  

Description :  

Part points

  • The BLF278 is a power amplifier transistor chip commonly used in linear amplifier applications. it operates in the uhf frequency range (400-470 mhz) and offers high power output, typically around 300 watts. the chip is designed for efficiency and reliability, making it suitable for various communication systems and rf amplification projects.
  • Equivalent

    The BLF278 transistor chip is part of the philips semiconductors rf power transistor family. it does not have an exact equivalent product, but other similar rf power transistors that can be used as alternatives include the blf177, blf184, and blf188. these chips have similar specifications and can be used in similar applications.
  • Features

    The BLF278 is a high-power vhf mos transistor designed for industrial, scientific, and medical (ism) applications. it operates at a frequency range of 175 to 260 mhz and delivers a power output of up to 250 watts. with a rugged design and reliable performance, it is often used in radio and television transmitters.
  • Pinout

    The BLF278 is a 2-lead pin device that functions as a power amplifier for industrial ldmos applications.
  • Manufacturer

    The BLF278 is manufactured by nxp semiconductors, a dutch multinational semiconductor manufacturer. nxp is a leading company in the automotive, internet of things (iot), and industrial areas. they provide high-performance mixed-signal and standard product solutions for various industries, including automotive, security, and identification, mobile, and communication infrastructure.
  • Application Field

    The BLF278 is a high-power rf transistor commonly used in applications such as broadcast transmitters, industrial heating, and medical equipment.
  • Package

    The BLF278 chip typically comes in a metal sealed package known as to-59. the form of the chip is transistor and it has a size of approximately 8.5mm x 9.5mm.

Datasheet PDF

Preliminary Specification BLF278 PDF Download

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